Two-dimensional electron gas based actuation of piezoelectric AlGaN/GaN microelectromechanical resonators

被引：34

作者：

Brueckner, K. ^{[1
]}

Niebelschuetz, F. ^{[1
]}

Tonisch, K. ^{[1
]}

Michael, S. ^{[2
]}

Dadgar, A. ^{[3
]}

Krost, A. ^{[3
]}

Cimalla, V. ^{[4
]}

Ambacher, O. ^{[4
]}

Stephan, R. ^{[1
]}

Hein, M. A. ^{[1
]}

机构：

[1] Ilmenau Univ Technol, Inst Micro & Nanotechnol, D-98693 Ilmenau, Germany

[2] Inst Microelect & Mechatron Syst, D-98693 Ilmenau, Germany

[3] Univ Magdeburg, Inst Expt Phys, D-39016 Magdeburg, Germany

[4] Fraunhofer Inst Appl Solid State Phys, D-79108 Freiburg, Germany

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 17期

关键词：

D O I：

10.1063/1.3002296

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Free-standing piezoelectric AlGaN/GaN beam resonators have been prepared on silicon substrates.The two-dimensional electron gas at the interface of the III/V heterostructure has been employed to act as back electrode for the piezoelectric active layer. The fundamental mode as well as higher order resonant modes of flexural vibration has been excited piezoelectrically and analyzed using optical laser-Doppler vibrometry. The experimental investigations were carried out under normal ambient conditions. The specific piezoelectric actuation scheme is described and the dependence of the measured resonant frequencies between 0.2 and 8.1 MHz on geometry and material parameters is investigated. (C) 2008 American Institute of Physics. [DOI: 10.1063/1.3002296]

引用

页数：3

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