Effect of composition on electroless deposited Ni-Co-P alloy thin films as a diffusion barrier for copper metallization

被引：17

作者：

Kumar, Anuj ^{[1
,2
]}

Kumar, Mukesh ^{[1
]}

Kumar, Dinesh ^{[1
]}

机构：

[1] Kurukshetra Univ, Dept Elect Sci, Kurukshetra 136119, Haryana, India

[2] IIT Delhi, CES Dept, New Delhi 110016, India

来源：

APPLIED SURFACE SCIENCE | 2012年 / 258卷 / 20期

关键词：

Ni-Co-P; Diffusion barrier; Copper; Electroless; THERMAL-STABILITY; CU; ULSI; SI; MICROELECTRONICS; TECHNOLOGY; TUNGSTEN; LAYERS;

D O I：

10.1016/j.apsusc.2012.04.145

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Ni-Co-P alloy films were deposited on silicon substrate by electroless technique for diffusion barrier application in copper interconnects technology. The composition of films was varied by varying the concentration of contents in electroless deposition baths. The thermal stability of the films was evaluated by the annealing of samples at elevated temperature and the samples were characterised by using X-ray diffractometer (XRD), four probe method and field-emission scanning electron microscope (FE-SEM). Results indicated that barrier properties degraded with increasing the concentration of Co i.e. decreasing the P. The lower Co and higher P contents alloy film act as a good diffusion barrier up to the 500 degrees C. (c) 2012 Elsevier B.V. All rights reserved.

引用

页码：7962 / 7967

页数：6

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