In situ study of surface reactions of atomic layer deposited LaxAl2-xO3 films on atomically clean In0.2Ga0.8As

被引：31

作者：

Aguirre-Tostado, F. S. ^{[1
]}

Milojevic, M. ^{[1
]}

Lee, B. ^{[1
]}

Kim, J. ^{[1
]}

Wallace, R. M. ^{[1
]}

机构：

[1] Univ Texas Dallas, Dept Mat Sci & Engn, Dallas, TX 75083 USA

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 17期

关键词：

D O I：

10.1063/1.3009303

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The surface reactions of La(x)Al(2-x)O(3) ultrathin films deposited on atomically clean In(0.2)Ga(0.8)As by atomic layer deposition are studied by in situ high resolution x-ray photoelectron spectroscopy. Using 1:2 alternating cycles of La(2)O(3) and Al(2)O(3) results in a La:Al concentration ratio of 1:10. We found that the La(x)Al(2-x)O(3)/InGaAs interface consisted of interfacial Ga-suboxides and As-As bonds but no As- or In-oxides were detected. This suggests an interface formed by Ga-O-Al and Ga-O-La bonds from the precursor reaction. (c) 2008 American Institute of Physics. [DOI: 10.1063/1.3009303]

引用

页数：3

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