Fast method to determine the structural defect density of 156 x 156 mm2 mc-Si wafers

被引：4

作者：

Bakowskie, R. ^{[1
]}

Kesser, G. ^{[1
]}

Richter, R. ^{[2
]}

Lausch, D. ^{[3
]}

Eidner, A. ^{[1
]}

Clemens, P. ^{[4
]}

Petter, K. ^{[1
]}

机构：

[1] Q Cells SE, OT Thalheim, Sonnenallee 17-21, D-06766 Bitterfeld, Germany

[2] Compact Dynam GmbH, D-82319 Starnberg, Germany

[3] Fraunhofer Ctr Silicon Photovolta CSP, D-06120 Halle, Germany

[4] Greencells GmbH, D-66111 Saarbrucken, Germany

来源：

PROCEEDINGS OF THE 2ND INTERNATIONAL CONFERENCE ON CRYSTALLINE SILICON PHOTOVOLTAICS (SILICONPV 2012) | 2012年 / 27卷

关键词：

structural defects; defect density; dislocations; defect mapping; multicrystalline silicon;

D O I：

10.1016/j.egypro.2012.07.048

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Today a remaining challenge is to determine the structural defect density (SDD) on a whole 156 x 156 mm(2) multicrystalline (mc) silicon wafer over a timescale of a few minutes. In this contribution a new method is introduced to determine the SDD on large scale mc-Si wafers. The main advantage of the method presented is the possibility to obtain a complete map of the SDD of a 156 x 156 mm(2) mc-Si wafer as well as a quantitative SDD analysis of the wafer in just a few minutes. Furthermore, the simple and quick sample preparation as well as the application of standard measurement equipment results in a convenient and cost-effective analysis tool. With these advantages, analysis of SDDs on large quantities of wafers, e. g. across the ingot height or width, can be easily realized in a few hours. (C) 2012 Published by Elsevier Ltd. Selection and peer-review under responsibility of the scientific committee of the SiliconPV 2012 conference.

引用

页码：179 / 184

页数：6

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