Simultaneous molecular beam epitaxy growth at multiple uniform substrate temperatures

被引:2
作者
May, Brelon J. [1 ]
Myers, Roberto C. [2 ]
机构
[1] Ohio State Univ, Dept Mat Sci & Engn, 116 W 19Th Ave, Columbus, OH 43210 USA
[2] Ohio State Univ, Dept Mat Sci & Engn, Dept Elect & Comp Engn, 116 W 19Th Ave, Columbus, OH 43210 USA
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2018年 / 36卷 / 01期
关键词
THIN-FILMS; GAAS;
D O I
10.1116/1.5008523
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A substrate holder is demonstrated for molecular beam epitaxy (MBE) growth at four calibrated substrate temperatures in the same growth run. On a standard 3-in. substrate block, the substrate face plate can hold simultaneously four substrates, each at a uniform and isolated temperature. The samples are otherwise under identical growth conditions, providing a fourfold increase in sample throughput per growth run. Therefore, the multi-temperature-zone substrate holder is particularly suited for materials research and development by MBE, where it enables rapid mapping of the growth phase diagram. Published by the AVS.
引用
收藏
页数:3
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