A 33.6-to-33.8 Gb/s Burst-Mode CDR in 90 nm CMOS Technology

被引:7
作者
Cho, Lan-Chou [1 ]
Lee, Chihun
Hung, Chao-Ching
Liu, Shen-Luan
机构
[1] Natl Taiwan Univ, Grad Inst Elect Engn, Taipei 10617, Taiwan
关键词
Burst-mode clock/data recovery; gated voltage-controlled oscillator; passive optical networks; phase-locked loop; CIRCUIT;
D O I
10.1109/JSSC.2008.2012326
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A 33.6-33.8 Gb/s burst-mode clock/data recovery circuit (BMCDR) is presented in this paper. To reduce the data jitter and generate the high-frequency output clock, the LC gated voltage-controlled oscillator is presented. To receive and transmit the broadband data, a wideband input matching circuit and a wideband data buffer are presented, respectively. The phase selector is proposed to overcome the false phase lock due to the full-rate operation. This proposed BMCDR has been fabricated in a 90 nm CMOS process. The measured peak-to-peak and rms jitters for the recovered data are 7.56 ps and 1.15 ps, respectively, for a 33.72 Gb/s, 2(11)-1 PRBS. The measured bit error rate is less than 10(-8) for a 33.72 Gb/s, 2(7)-1 PRBS. It consumes 73 mW without buffers from a 1.2 V supply.
引用
收藏
页码:775 / 783
页数:9
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