Monte Carlo simulation on electron intervalley transfer process in ZnS-type thin-film electroluminescent devices

被引：11

作者：

Zhao, H ^{[1
]}

Wang, YS ^{[1
]}

Xu, Z ^{[1
]}

Xu, XR ^{[1
]}

机构：

[1] No Jiaotong Univ, Inst Optoelect Technol, Beijing 100044, Peoples R China

来源：

ACTA PHYSICA SINICA | 1999年 / 48卷 / 03期

关键词：

D O I：

10.7498/aps.48.533

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Based on the calculation about intervalley scattering rates in ZnS, intervalley transfer process in ZnS-type thin-film electroluminescent devices is investigated through Monte Carlo simulation. The transient process of intervalley transfer, the influence of electric field on intervalley distribution and the electron kinetic energy distributions in different valleys are obtained. We propose that high valley could store energy. These results could be used as the basic data an the study of electroluminescent process.

引用

页码：533 / 538

页数：6

共 10 条

[1] MONTE-CARLO SIMULATION OF ELECTRON-TRANSPORT IN ALTERNATING-CURRENT THIN-FILM ELECTROLUMINESCENT DEVICES [J].

BHATTACHARYYA, K ;

GOODNICK, SM ;

WAGER, JF .

JOURNAL OF APPLIED PHYSICS, 1993, 73 (07) :3390-3395

[2] THEORY OF HIGH-FIELD ELECTRONIC TRANSPORT IN BULK ZNS AND ZNSE [J].

BRENNAN, K .

JOURNAL OF APPLIED PHYSICS, 1988, 64 (08) :4024-4030

[3] MONTE-CARLO SIMULATION OF ELECTRON-TRANSPORT IN ALTERNATING-CURRENT THIN-FILM ELECTROLUMINESCENT DEVICES - COMMENT [J].

BRENNAN, KF .

JOURNAL OF APPLIED PHYSICS, 1994, 75 (01) :678-678

[4] IMPACT EXCITATION IN ZNS-TYPE ELECTROLUMINESCENCE [J].

BRINGUIER, E .

JOURNAL OF APPLIED PHYSICS, 1991, 70 (08) :4505-4512

[5] HIGH-FIELD TRANSPORT STATISTICS AND IMPACT EXCITATION IN SEMICONDUCTORS [J].

BRINGUIER, E .

PHYSICAL REVIEW B, 1994, 49 (12) :7974-7989

[6] A SIMPLE-MODEL FOR THE HYSTERETIC BEHAVIOR OF ZNS-MN THIN-FILM ELECTROLUMINESCENT DEVICES [J].

HOWARD, WE ;

SAHNI, O ;

ALT, PM .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (01) :639-647

[7]

JACOBONI C, 1989, MONTE CARLO METHOD S, P38

[8] BALLISTIC TRANSPORT AND ELECTROLUMINESCENCE IN IIB-VI AND IIA-VI COMPOUNDS [J].

MACH, R ;

MULLER, GO .

JOURNAL OF CRYSTAL GROWTH, 1990, 101 (1-4) :967-975

[9]

ONO YA, 1995, WORLD SCI, V6, P5

[10] LUCKY-DRIFT MECHANISM FOR IMPACT IONIZATION IN SEMICONDUCTORS [J].

RIDLEY, BK .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1983, 16 (17) :3373-3388

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