Field-Effect Transistors Based on WS2 Nanotubes with High Current-Carrying Capacity

被引：132

作者：

Levi, Roi ^{[1
]}

Bitton, Ora ^{[2
]}

Leitus, Gregory ^{[2
]}

Tenne, Reshef ^{[1
]}

Joselevich, Ernesto ^{[1
]}

机构：

[1] Weizmann Inst Sci, Dept Mat & Interfaces, IL-76100 Rehovot, Israel

[2] Weizmann Inst Sci, Dept Chem Res Support, IL-76100 Rehovot, Israel

来源：

NANO LETTERS | 2013年 / 13卷 / 08期

基金：

以色列科学基金会;

关键词：

Inorganic nanotubes; transistor; WS2; tungsten disulfide; conductivity; ELECTRONIC-PROPERTIES; ELECTRICAL-TRANSPORT; CARBON NANOTUBES; GROWTH; MO;

D O I：

10.1021/nl401675k

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We report the first transistor based on inorganic nanotubes exhibiting mobility values of up to 50 cm(2) V-1 s(-1) for an individual WS2 nanotube. The current-carrying capacity of these nanotubes was surprisingly high with respect to other low-dimensional materials, with current density at least 2.4 X 10(8) A cm(-2). These results demonstrate that inorganic nanotubes are promising building blocks for high-performance electronic applications.

引用

页码：3736 / 3741

页数：6

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