Quantum Mechanical Study of the Germanium Electron-Hole Bilayer Tunnel FET

被引：41
作者：
Alper, Cem [1 ]
Lattanzio, Livio [1 ]
De Michielis, Luca [1 ]
Palestri, Pierpaolo [2 ]
Selmi, Luca [2 ]
Ionescu, Adrian Mihai [1 ]
机构：
[1] Ecole Polytech Fed Lausanne, Nanoelect Devices Lab, CH-1015 Lausanne, Switzerland
[2] Univ Udine, Dipartimento Ingn Elettr Gest & Meccan, I-33100 Udine, Italy
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2013年 / 60卷 / 09期
关键词：
2-D-2-D tunneling; band-to-band tunneling (BTBT); density of states (DOS); electron-hole bilayer tunnel field-effect transistor (EHBTFET); germanium; quantum mechanical (QM) simulation; subthreshold slope; tunnel field-effect transistor (TFET);
D O I：
10.1109/TED.2013.2274198
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The electron-hole bilayer tunnel field-effect transistor (EHBTFET) is an electronic switch that uses 2-D-2-D sub-band-to-sub-band tunneling (BTBT) between electron and hole inversion layers and shows significant subthermal swing over several decades of current due to the step-like 2-D density of states behavior. In this paper, EHBTFET has been simulated using a quantum mechanical model. The model results are compared against transactions on computer-aided design simulations and remarkable differences show the importance of quantum effects and dimensionality in this device. Ge EHBTFET with channel thickness of 10 nm results as a promising device for low supply voltage, subthreshold logic applications, with a super steep switching behavior featuring SSavg similar to 40 mV/dec up to V-DD. Furthermore, it has been demonstrated that high ON current levels (similar to 40 mu A/mu m) can be achieved due to the transition from phonon-assisted BTBT to direct BTBT at higher biases.
引用
收藏
页码：2754 / 2760
页数：7
相关论文
共 25 条
[1]  
Agarwal S., 2011, 2011 69th Annual Device Research Conference (DRC), P199, DOI 10.1109/DRC.2011.5994496
[2]   A Tunnel FET for VDD Scaling Below 0.6 V With a CMOS-Comparable Performance [J].
Asra, Ram ;
Shrivastava, Mayank ;
Murali, Kota V. R. M. ;
Pandey, Rajan K. ;
Gossner, Harald ;
Rao, V. Ramgopal .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2011, 58 (07) :1855-1863
[3]   SELF-CONSISTENT MODELING OF RESONANT INTERBAND TUNNELING IN BIPOLAR TUNNELING FIELD-EFFECT TRANSISTORS [J].
BIGELOW, JM ;
LEBURTON, JP .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (02) :125-131
[4]  
De Michielis L., 2011, 2011 69th Annual Device Research Conference (DRC), P111, DOI 10.1109/DRC.2011.5994440
[5]   Understanding the Superlinear Onset of Tunnel-FET Output Characteristic [J].
De Michielis, Luca ;
Lattanzio, Livio ;
Ionescu, Adrian M. .
IEEE ELECTRON DEVICE LETTERS, 2012, 33 (11) :1523-1525
[6]   MONTE-CARLO SIMULATION OF TRANSPORT IN TECHNOLOGICALLY SIGNIFICANT SEMICONDUCTORS OF THE DIAMOND AND ZINCBLENDE STRUCTURES .1. HOMOGENEOUS TRANSPORT [J].
FISCHETTI, MV .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1991, 38 (03) :634-649
[7]  
Gnani E., 2012, ESSDERC 2012 - 42nd European Solid State Device Research Conference, P105, DOI 10.1109/ESSDERC.2012.6343344
[8]   Electrical TCAD Simulations of a Germanium pMOSFET Technology [J].
Hellings, Geert ;
Eneman, Geert ;
Krom, Raymond ;
De Jaeger, Brice ;
Mitard, Jerome ;
De Keersgieter, An ;
Hoffmann, Thomas ;
Meuris, Marc ;
De Meyer, Kristin .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2010, 57 (10) :2539-2546
[9]   Direct and Indirect Band-to-Band Tunneling in Germanium-Based TFETs [J].
Kao, Kuo-Hsing ;
Verhulst, Anne S. ;
Vandenberghe, William G. ;
Soree, Bart ;
Groeseneken, Guido ;
De Meyer, Kristin .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2012, 59 (02) :292-301
[10]   Tunnel Field Effect Transistor With Raised Germanium Source [J].
Kim, Sung Hwan ;
Agarwal, Sapan ;
Jacobson, Zachery A. ;
Matheu, Peter ;
Hu, Chenming ;
Liu, Tsu-Jae King .
IEEE ELECTRON DEVICE LETTERS, 2010, 31 (10) :1107-1109
123