Yellow Luminescence of Polar and Nonpolar GaN Nanowires on r-Plane Sapphire by Metal Organic Chemical Vapor Deposition

被引：73

作者：

Xu, Shengrui ^{[1
]}

Hao, Yue ^{[1
]}

Zhang, Jincheng ^{[1
]}

Jiang, Teng ^{[1
]}

Yang, Linan ^{[1
]}

Lu, Xiaoli ^{[1
]}

Lin, Zhiyu ^{[1
]}

机构：

[1] Xidian Univ, Sch Microelect, State Key Discipline Lab Wide Band Gap Semicond T, Xian 710071, Peoples R China

来源：

NANO LETTERS | 2013年 / 13卷 / 08期

基金：

中国国家自然科学基金;

关键词：

GaN; nanowire; yellow luminescence; polar; nonpolar; HETEROSTRUCTURES; CARBON;

D O I：

10.1021/nl4015205

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We have grown horizontal oriented, high growth rate, well-aligned polar (0001) single crystalline GaN nanowires and high-density and highly aligned GaN nonpolar (11-20) nanowires on r-plane substrates by metal organic chemical vapor deposition. It can be found that the polar nanowires showed a strong yellow luminescence (YL) intensity compared with the nonpolar nanowires. The different trends of the incorporation of carbon in the polar, nonpolar, and semipolar GaN associated with the atom bonding structure were discussed and proved by energy-dispersive X-ray spectroscopy, suggesting that C-involved defects are the origin responsible for the YL in GaN nanowires.

引用

页码：3654 / 3657

页数：4

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