Differences in the structure composition of microcrystalline silicon solar cells deposited by HWCVD and PECVD:: Influence on open circuit voltage

被引：10

作者：

Mai, Y ^{[1
]}

Klein, S

Geng, X

Hülsbeck, M

Carius, R

Finger, F

机构：

[1] Forschungszentrum Julich, Inst Photovolta IPV, D-52425 Julich, Germany

[2] Nankai Univ, Inst Photoelect, Tianjin 300071, Peoples R China

来源：

THIN SOLID FILMS | 2006年 / 501卷 / 1-2期

关键词：

hot-wire chemical vapor deposition; solar cells; PECVD; open circuit voltage;

D O I：

10.1016/j.tsf.2005.07.193

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Structural properties, current-voltage (J-V) characteristics in the dark and under illumination and quantum efficiency are systematically studied and compared for mu c-Si:H solar cells with i-layers deposited by HWCVD or PECVD. A correlation between the increasing V(OC) and decreasing crystalline volume fraction of the i-layer can be observed in solar cells deposited by HWCVD and PECVD. At high crystallinity, similar J-V parameters are obtained for both methods. However, HWCVD solar cells can be prepared with lower crystalline volume fractions below 50%, without the drastic drop of solar performance observed in PECVD solar cells. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：272 / 275

页数：4

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