Identification of nnp and npp Auger recombination as significant contributor to the efficiency droop in (GaIn)N quantum wells by visualization of hot carriers in photoluminescence

被引：111
作者：
Binder, M. [1 ]
Nirschl, A. [1 ,2 ]
Zeisel, R. [1 ]
Hager, T. [1 ]
Lugauer, H. -J. [1 ]
Sabathil, M. [1 ]
Bougeard, D. [2 ]
Wagner, J. [3 ]
Galler, B. [1 ]
机构：
[1] OSRAM Opto Semicond GmbH, D-93055 Regensburg, Germany
[2] Univ Regensburg, Inst Expt & Angew Phys, D-93040 Regensburg, Germany
[3] Fraunhofer Inst Appl Solid State Phys, D-79108 Freiburg, Germany
来源：
APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 07期
关键词：
LIGHT-EMITTING-DIODES;
D O I：
10.1063/1.4818761
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report the direct observation of hot carriers generated by Auger recombination via photoluminescence spectroscopy on tailored (AlGaIn)N multiple quantum well (QW) structures containing alternating green and ultra-violet (UV) emitting (GaIn) N QWs. Optically pumping solely the green QWs using a blue emitting high power laser diode, carrier densities similar to electrical light-emitting diode (LED) operation were achieved, circumventing possible leakage and injection effects. This way, luminescence from the UV QWs could be observed for excitation where the emission from the green QWs showed significant droop, giving direct evidence for Auger generated hot electrons and holes being injected into the UV QWs. An examination of the quantitative relation between the intensity of the UV luminescence and the amount of charge carriers lost due to drooping of the QWs supports the conclusion that Auger processes contribute significantly to the droop phenomenon in (AlGaIn) N based light-emitting diodes. (C) 2013 AIP Publishing LLC.
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页数：5
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