Chemical beam epitaxy of InP without precracking using tertiarybutylbis(dimethylamino)phosphine

For the first time, single crystalline layers of indium phosphide (InP) have been grown by the chemical beam epitaxy (CBE) technique without thermally precracking the phosphorus (P) source. This was accomplished using a novel P precursor, tertiarybutylbis(dimethylamino)phosphine (TBBDMAP). For a constant input V/III ratio of 7.2, InP growth was studied for growth temperatures from 450 to 530 degrees C. At 450 degrees C, the surface was indium rich due to the incomplete pyrolysis of TBBDMAP. At 480 and 510 degrees C, InP epilayers were successfully grown without precracking the TBBDMAP. An indium-rich surface was also observed at 530 degrees C using this input V/III ratio due to the high rate of phosphorus desorption. At growth temperatures of 480 and 510 degrees C, the effect of the cracker cell temperature on the InP growth rate was studied.