An Effective Potential Approach to Modeling 25 nm MOSFET Devices

被引:12
作者
Ahmed, S. [1 ]
Ringhofer, C. [2 ]
Vasileska, D. [1 ]
机构
[1] Arizona State Univ, Dept Elect Engn, Tempe, AZ 85287 USA
[2] Arizona State Univ, Dept Math, Tempe, AZ 85287 USA
关键词
quantum thermodynamics; effective potentials;
D O I
10.1023/B:JCEL.0000011409.76632.70
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We present a thermodynamic approach to introducing quantum corrections to the classical transport picture in semiconductor device simulation. The approach leads to a modified Boltzmann equation with an effective quantum potential. We study the quantum interaction of electrons with a gate oxide barrier potential in a 25 nm MOSFET.
引用
收藏
页码:113 / 117
页数:5
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