Present and Future Applications of Silicon Carbide Devices and Circuits

被引：0
|
作者：
Zetterling, Carl-Mikael [1 ]
机构：
[1] KTH Royal Inst Technol, Dept Integrated Devices & Circuits, Stockholm, Sweden
来源：
2012 IEEE CUSTOM INTEGRATED CIRCUITS CONFERENCE (CICC) | 2012年
关键词：
Silicon carbide; high voltage; high temperature;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Silicon Carbide (SiC) is a wide bandgap semiconductor now reaching maturity. Discrete high-voltage SiC devices are commercially available from several suppliers for low-loss power conversion. Future applications may include integrated circuits for high-temperature and radiation-hard applications. This paper introduces SiC material properties, processing, devices, and circuits.
引用
收藏
页数：8
相关论文
共 50 条
  • [41] Silicon carbide color centers for quantum applications
    Castelletto, Stefania
    Boretti, Alberto
    JOURNAL OF PHYSICS-PHOTONICS, 2020, 2 (02):
  • [42] Silicon carbide: a versatile material for biosensor applications
    Alexandra Oliveros
    Anthony Guiseppi-Elie
    Stephen E. Saddow
    Biomedical Microdevices, 2013, 15 : 353 - 368
  • [43] Silicon carbide: a versatile material for biosensor applications
    Oliveros, Alexandra
    Guiseppi-Elie, Anthony
    Saddow, Stephen E.
    BIOMEDICAL MICRODEVICES, 2013, 15 (02) : 353 - 368
  • [44] Applications of Silicon Carbide JFETs in Power Converters
    Shillington, Rory
    Gaynor, Paul
    Harrison, Michael
    Heffernan, Bill
    2010 20TH AUSTRALASIAN UNIVERSITIES POWER ENGINEERING CONFERENCE (AUPEC 2010): POWER QUALITY FOR THE 21ST CENTURY, 2010,
  • [45] Quantum systems in silicon carbide for sensing applications
    Castelletto, S.
    Lew, C. T-K
    Lin, Wu-Xi
    Xu, Jin-Shi
    REPORTS ON PROGRESS IN PHYSICS, 2024, 87 (01)
  • [46] Carbon nanotube array thermal interfaces for high-temperature silicon carbide devices
    Cola, Baratunde A.
    Xu, Xianfan
    Fisher, Timothy S.
    Capano, Michael A.
    Amama, Placidus B.
    NANOSCALE AND MICROSCALE THERMOPHYSICAL ENGINEERING, 2008, 12 (03) : 228 - 237
  • [47] Silicon Carbide Bipolar Analog Circuits for Extreme Temperature Signal Conditioning
    Roy, Sajib
    Rashid, Arman Ur
    Abbasi, Affan
    Murphree, Robert C.
    Hossain, Md Maksudul
    Faruque, Asif
    Metreveli, Alex
    Zetterling, Carl-Mikael
    Fraley, John
    Sparkman, Brett
    Mantooth, H. Alan
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2019, 66 (09) : 3764 - 3770
  • [48] Silicon Carbide Technology of MESFET-Based Power Integrated Circuits
    Mogniotte, Jean-Francois
    Tournier, Dominique
    Raynaud, Christophe
    Lazar, Mihai
    Planson, Dominique
    Allard, Bruno
    IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS, 2018, 6 (02) : 539 - 548
  • [49] Designing Silicon Carbide NMOS Integrated Circuits for Wide Temperature Operation
    Chen, Cheng-Po
    Ghandi, Reza
    2015 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS), 2015, : 109 - 112
  • [50] Periphery protection for silicon carbide devices: State of the art and simulation
    Planson, D
    Locatelli, ML
    Ortolland, S
    Chante, JP
    Mitlehner, H
    Stephani, D
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1997, 46 (1-3): : 210 - 217
12345