Degradation of a gallium-arsenide photoemitting NEA surface by water vapour

被引：45

作者：

Durek, D ^{[1
]}

Frommberger, F ^{[1
]}

Reichelt, T ^{[1
]}

Westermann, M ^{[1
]}

机构：

[1] Univ Bonn, Inst Phys, D-53115 Bonn, Germany

来源：

APPLIED SURFACE SCIENCE | 1999年 / 143卷 / 1-4期

关键词：

polarized electron source; NEA surface; quantum efficiency; influence of water vapour;

D O I：

10.1016/S0169-4332(99)00085-9

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The influence of water vapour on the photoemissivity of GaAs crystals has been measured. Water vapour belongs to the gases with strong poisoning effects; even small amounts of water below the detection limit of conventional RGA systems reduce the practical lifetime of a GaAs photocathode. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：319 / 322

页数：4

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