Antiferromagnetic coupling across silicon regulated by tunneling currents

被引：1

作者：

Gareev, R. R. ^{[1
]}

Schmid, M. ^{[1
]}

Vancea, J. ^{[1
]}

Back, C. H. ^{[1
]}

Schreiber, R. ^{[2
]}

Buergler, D. ^{[2
]}

Schneider, C. M. ^{[2
,3
,4
]}

Stromberg, F. ^{[3
,4
]}

Wende, H. ^{[3
,4
]}

机构：

[1] Univ Regensburg, Inst Expt & Appl Phys, D-93040 Regensburg, Germany

[2] Res Ctr Juelich, Inst Solid State Res IFF, D-52428 Julich, Germany

[3] Univ Duisburg Essen, Fac Phys, D-47048 Duisburg, Germany

[4] Univ Duisburg Essen, Ctr Nanointegrat Duisburg Essen CeNIDE, D-47048 Duisburg, Germany

来源：

APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 02期

关键词：

LAYERED MAGNETIC-STRUCTURES; INTERLAYER EXCHANGE; MAGNETORESISTANCE; JUNCTIONS; TORQUE; BARRIER; DRIVEN;

D O I：

10.1063/1.3675872

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the enhancement of antiferromagnetic coupling in epitaxial Fe/Si/Fe structures by voltage-driven spin-polarized tunneling currents. Using the ballistic electron magnetic microscopy, we established that the hot-electron collector current reflects magnetization alignment and the magnetocurrent exceeds 200% at room temperature. The saturation magnetic field for the collector current corresponding to the parallel alignment of magnetizations rises up with the tunneling current, thus demonstrating stabilization of the antiparallel alignment and increasing antiferromagnetic coupling. We connect the enhancement of antiferromagnetic coupling with local dynamic spin torques mediated by spin-polarized tunneling electrons. (C) 2012 American Institute of Physics. [doi: 10.1063/1.3675872]

引用

页数：3

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