Characterization of Tin-catalyzed silicon nanowires synthesized by the hydrogen radical-assisted deposition method

被引：36

作者：

Jeon, Minsung ^{[1
]}

Uchiyama, Hisashi ^{[1
]}

Kainisako, Koichi ^{[1
]}

机构：

[1] Tokyo Univ Agr & Technol, Elect & Informat Engn Dept, Koganei, Tokyo 1848588, Japan

来源：

MATERIALS LETTERS | 2009年 / 63卷 / 02期

关键词：

Tin catalyst; Silicon nanowires; Hydrogen radicals; VLS mechanism; Phase diagram; SEMICONDUCTOR NANOWIRES; GROWTH; DEVICES; SI;

D O I：

10.1016/j.matlet.2008.10.005

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Tin-catalyzed silicon nanowires (SiNWs) were synthesized at various hydrogen gas flow rates using the hydrogen radical-assisted deposition method. Large quantities of SiNWs with various crystal phases were synthesized and their characteristics were estimated. Tin-capped SiNWs were straightly grown and their structures were changed with increasing hydrogen gas flow rates. Their diameters on the bottom side were increased ranging from approximately 50 to 200 nm and their lengths extended up to -2 mu m with increasing hydrogen gas flow rates. (c) 2008 Elsevier B.V. All rights reserved.

引用

页码：246 / 248

页数：3

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