Highly-efficient green phosphorescent organic light-emitting diodes with hybrid device geometry
被引:0
作者:
Haldi, Andreas
论文数: 0引用数: 0
h-index: 0
机构:
Georgia Inst Technol, Sch Elect & Comp Engn, COPE, Atlanta, GA 30332 USAGeorgia Inst Technol, Sch Elect & Comp Engn, COPE, Atlanta, GA 30332 USA
Haldi, Andreas
[1
]
Domercq, Benoit
论文数: 0引用数: 0
h-index: 0
机构:
Georgia Inst Technol, Sch Elect & Comp Engn, COPE, Atlanta, GA 30332 USAGeorgia Inst Technol, Sch Elect & Comp Engn, COPE, Atlanta, GA 30332 USA
Domercq, Benoit
[1
]
Sharma, Asha
论文数: 0引用数: 0
h-index: 0
机构:
Georgia Inst Technol, Sch Elect & Comp Engn, COPE, Atlanta, GA 30332 USAGeorgia Inst Technol, Sch Elect & Comp Engn, COPE, Atlanta, GA 30332 USA
Sharma, Asha
[1
]
Hreha, Richard D.
论文数: 0引用数: 0
h-index: 0
机构:
Univ Arizona, Dept Chem, Tucson, AZ 85721 USAGeorgia Inst Technol, Sch Elect & Comp Engn, COPE, Atlanta, GA 30332 USA
Hreha, Richard D.
[2
]
Cho, Jian-Yang
论文数: 0引用数: 0
h-index: 0
机构:
Georgia Inst Technol, Sch Chem & Biochem, COPE, Atlanta, GA 30332 USAGeorgia Inst Technol, Sch Elect & Comp Engn, COPE, Atlanta, GA 30332 USA
Cho, Jian-Yang
[3
]
Marder, Seth R.
论文数: 0引用数: 0
h-index: 0
机构:
Georgia Inst Technol, Sch Chem & Biochem, COPE, Atlanta, GA 30332 USAGeorgia Inst Technol, Sch Elect & Comp Engn, COPE, Atlanta, GA 30332 USA
Marder, Seth R.
[3
]
Kippelen, Bernard
论文数: 0引用数: 0
h-index: 0
机构:
Georgia Inst Technol, Sch Elect & Comp Engn, COPE, Atlanta, GA 30332 USAGeorgia Inst Technol, Sch Elect & Comp Engn, COPE, Atlanta, GA 30332 USA
Kippelen, Bernard
[1
]
机构:
[1] Georgia Inst Technol, Sch Elect & Comp Engn, COPE, Atlanta, GA 30332 USA
[2] Univ Arizona, Dept Chem, Tucson, AZ 85721 USA
[3] Georgia Inst Technol, Sch Chem & Biochem, COPE, Atlanta, GA 30332 USA
来源:
ORGANIC LIGHT EMITTING MATERIALS AND DEVICES XII
|
2008年
/
7051卷
基金:
美国国家科学基金会;
关键词:
Organic light-emitting diodes;
phosphorescent;
efficiency;
solution-processing;
CBP;
Ir(ppy)(3);
HOLE TRANSPORT LAYER;
QUANTUM-EFFICIENCY;
ELECTRON INJECTION;
IRIDIUM-COMPLEX;
ELECTROLUMINESCENCE;
EMISSION;
D O I:
10.1117/12.795363
中图分类号:
TH7 [仪器、仪表];
学科分类号:
0804 ;
080401 ;
081102 ;
摘要:
We report on the performance of green phosphorescent organic light-emitting diodes (OLEDs) based on the well-known device structure of a hole-transport layer, an emissive layer with host 4,4'-di(carbazol-9-yl)-biphenyl [CBP] and the green phosphor emitter fac tris(2-phenylpyridinato-N,C-2,) iridium [Ir(ppy)(3)], a hole-blocking layer of 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline [BCP] and and tris-(8-hydroxyquinolinato-N,O) aluminum [Alq(3)] as an electron-transport layer. Using spin-coated hole-injection/transport layers with increasing ionization potentials and decreasing hole mobilities, external quantum efficiencies of up to 18.1% at 100 cd/m(2) were measured in such devices. Furthermore, by removing the electron-transport layer of Alq(3) and increasing the thickness of BCP, devices with efficiencies of 21.2% and 72 cd/A at 100 cd/m(2) were obtained. Achieving such high efficiencies with a simplified hybrid structure in which one layer is processed from solution and only two other organic layers are deposited from the vapor phase is desirable for the fabrication of low-cost OLEDs.