Determination of the direct to indirect bandgap transition composition in AlxIn1-xP

被引：14

作者：

Beaton, D. A. ^{[1
]}

Christian, T. ^{[1
]}

Alberi, K. ^{[1
]}

Mascarenhas, A. ^{[1
]}

Mukherjee, K. ^{[2
]}

Fitzgerald, E. A. ^{[2
]}

机构：

[1] Natl Renewable Energy Lab, Golden, CO 80401 USA

[2] MIT, Cambridge, MA 02139 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2013年 / 114卷 / 20期

关键词：

LIGHT-EMITTING-DIODES;

D O I：

10.1063/1.4833540

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

AlxIn1-xP semiconductor alloys grown by metalorganic chemical vapor deposition on InGaAs graded buffer layers with varied aluminum compositions that span the transition from a direct to indirect semiconductor alloy are explored. The direct and indirect band gap transitions are observed in a single AlxIn1-xP sample with 40.8% allowing for a precise determination of the direct-indirect cross-over composition, x(c). The direct and indirect nature of observed luminescence peaks is verified using time-resolved photoluminescence. At low temperatures, x(c) is determined to be 40.5% at a corresponding direct band gap energy of 2.34 eV. (C) 2013 AIP Publishing LLC.

引用

页数：4

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