1 keV low energy argon ion beam was used to irradiate the surface of Zr55Cu30Ni5Al10 bulk metallic glass. Bulk metallic glass specimens irradiated for different times were used to join with Aluminum alloy by argon ion activated diffusion bonding. Compared with the joints using the as-cast bulk metallic glass, the tensile strength of the joints using irradiated specimens had a drastic improvement. Moreover, a crystalline layer was obtained in the BMG side of the joint interface using irradiated specimens. The improved joint quality was attributed to the local heating resulting from a crystallization behavior of irradiated surface layer which increases the probability of jumping the barrier to form the atom bonds, as well as the significant enhancement of the atomic diffusivity after crystallization. (C) 2013 Elsevier B.V. All rights reserved.
机构:
State Key Lab of Advanced Welding and Joining,Harbin Institute of TechnologyState Key Lab of Advanced Welding and Joining,Harbin Institute of Technology
Haiyan Chen
Jian Cao
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State Key Lab of Advanced Welding and Joining,Harbin Institute of TechnologyState Key Lab of Advanced Welding and Joining,Harbin Institute of Technology
Jian Cao
Xiaoguo Song
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School of Materials Science and Engineering,Harbin Institute of Technology at WeihaiState Key Lab of Advanced Welding and Joining,Harbin Institute of Technology
Xiaoguo Song
Jiakun Liu
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State Key Lab of Advanced Welding and Joining,Harbin Institute of TechnologyState Key Lab of Advanced Welding and Joining,Harbin Institute of Technology
Jiakun Liu
Jicai Feng
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State Key Lab of Advanced Welding and Joining,Harbin Institute of Technology
School of Materials Science and Engineering,Harbin Institute of Technology at WeihaiState Key Lab of Advanced Welding and Joining,Harbin Institute of Technology
机构:
Huazhong Univ Sci & Technol, State Key Lab Digital Mfg Equipment & Technol, Wuhan 430074, Peoples R China
Hubei Univ Educ, Dept Mech & Elect Engn, Wuhan 430205, Peoples R ChinaHuazhong Univ Sci & Technol, State Key Lab Digital Mfg Equipment & Technol, Wuhan 430074, Peoples R China
Chen, B.
Shi, T. L.
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Huazhong Univ Sci & Technol, State Key Lab Digital Mfg Equipment & Technol, Wuhan 430074, Peoples R ChinaHuazhong Univ Sci & Technol, State Key Lab Digital Mfg Equipment & Technol, Wuhan 430074, Peoples R China
Shi, T. L.
Li, M.
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机构:
Georgia Inst Technol, Sch Mat Sci Engn, Atlanta, GA 30332 USAHuazhong Univ Sci & Technol, State Key Lab Digital Mfg Equipment & Technol, Wuhan 430074, Peoples R China
Li, M.
Yang, F.
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Huazhong Univ Sci & Technol, State Key Lab Digital Mfg Equipment & Technol, Wuhan 430074, Peoples R ChinaHuazhong Univ Sci & Technol, State Key Lab Digital Mfg Equipment & Technol, Wuhan 430074, Peoples R China
Yang, F.
Yan, F.
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Huazhong Univ Sci & Technol, State Key Lab Digital Mfg Equipment & Technol, Wuhan 430074, Peoples R ChinaHuazhong Univ Sci & Technol, State Key Lab Digital Mfg Equipment & Technol, Wuhan 430074, Peoples R China
Yan, F.
Liao, G. L.
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Huazhong Univ Sci & Technol, State Key Lab Digital Mfg Equipment & Technol, Wuhan 430074, Peoples R ChinaHuazhong Univ Sci & Technol, State Key Lab Digital Mfg Equipment & Technol, Wuhan 430074, Peoples R China