Imaging Molecular Orbitals by Scanning Tunneling Microscopy on a Passivated Semiconductor

被引：56

作者：

Bellec, Amandine ^{[1
]}

Ample, Francisco ^{[2
]}

Riedel, Damien ^{[1
]}

Dujardin, Gerald ^{[1
]}

Joachim, Christian ^{[2
]}

机构：

[1] Univ Paris 11, CNRS, Photophys Mol Lab, F-91405 Orsay, France

[2] CNRS, CEMES, F-31055 Toulouse, France

来源：

NANO LETTERS | 2009年 / 9卷 / 01期

关键词：

SINGLE-MOLECULE; ATOMIC-SCALE; HYDROGEN; SURFACES; SILICON;

D O I：

10.1021/nl802688g

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Decoupling the electronic properties of a molecule from a substrate is of crucial importance for the development of single-molecule electronics. This is achieved here by adsorbing pentacene molecules at low temperature on a hydrogenated Si(100) surface (12 K). The low temperature (5 K) scanning tunneling microscope (STM) topography of the single pentacene molecule at the energy of the highest occupied molecular orbital (HOMO) tunnel resonance clearly resembles the native HOMO of the free molecule. The negligible electronic coupling between the molecule and the substrate is confirmed by theoretical STM topography and diffusion barrier energy calculations.

引用

收藏

页码：144 / 147

页数：4

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