Tunneling magnetoresistance effect in a few-electron quantum-dot spin valve

被引：10

作者：

Hamaya, K. ^{[1
,2
,3
]}

Kitabatake, M. ^{[1
]}

Shibata, K. ^{[1
]}

Jung, M. ^{[1
]}

Kawamura, M. ^{[1
]}

Ishida, S. ^{[4
]}

Taniyama, T. ^{[3
,5
]}

Hirakawa, K. ^{[1
,2
,6
]}

Arakawa, Y. ^{[1
,2
,4
]}

Machida, T. ^{[1
,2
,6
]}

机构：

[1] Univ Tokyo, Inst Ind Sci, Tokyo 1538505, Japan

[2] Univ Tokyo, Inst Nano Quantum Informat Elect, Tokyo 1538505, Japan

[3] Japan Sci & Technol Agcy, PRESTO, Kawaguchi, Saitama 3320012, Japan

[4] Univ Tokyo, Adv Sci & Technol Res Ctr, Tokyo 1538505, Japan

[5] Tokyo Inst Technol, Mat & Struct Lab, Yokohama, Kanagawa 2268503, Japan

[6] Japan Sci & Technol Agcy, CREST, Kawaguchi, Saitama 3320012, Japan

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 22期

关键词：

ground states; III-V semiconductors; indium compounds; magnetoelectronics; nickel; semiconductor quantum dots; spin valves; tunnelling magnetoresistance;

D O I：

10.1063/1.3042098

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate the tunneling magnetoresistance (TMR) effect through a semiconductor quantum dot (QD) with a few electrons in a lateral QD spin-valve device. At one-to-two electron transition, only inverse TMR effect is observed, where the TMR ratio is relatively large compared with the value based on the Julliere model. When the bias window reaches near the charging energy of the QD, the inverse TMR almost disappears. These features can be interpreted in terms of spin transport via the ground state of a two-electron QD.

引用

收藏

页数：3

相关论文

共 20 条

[1] Effects of spin accumulation on single-electron tunneling in a double ferromagnetic microjunction [J].

Barnas, J ;

Fert, A .

EUROPHYSICS LETTERS, 1998, 44 (01) :85-90

[2] Spin effects in ferromagnetic single-electron transistors [J].

Barnas, J ;

Martinek, J ;

Michalek, G ;

Bulka, BR ;

Fert, A .

PHYSICAL REVIEW B, 2000, 62 (18) :12363-12373

[3] Evidence for spin injection in a single metallic nanoparticle:: A step towards nanospintronics [J].

Bernand-Mantel, A. ;

Seneor, P. ;

Lidgi, N. ;

Munoz, M. ;

Cros, V. ;

Fusil, S. ;

Bouzehouane, K. ;

Deranlot, C. ;

Vaures, A. ;

Petroff, F. ;

Fert, A. .

APPLIED PHYSICS LETTERS, 2006, 89 (06)

[4] Inverse tunnel magnetoresistance in Co/SrTiO3/La0.7Sr0.3MnO3:: New ideas on spin-polarized tunneling [J].

De Teresa, JM ;

Barthélémy, A ;

Fert, A ;

Contour, JP ;

Lyonnet, R ;

Montaigne, F ;

Seneor, P ;

Vaurès, A .

PHYSICAL REVIEW LETTERS, 1999, 82 (21) :4288-4291

[5] Transient current spectroscopy of a quantum dot in the Coulomb blockade regime [J].

Fujisawa, T ;

Tokura, Y ;

Hirayama, Y .

PHYSICAL REVIEW B, 2001, 63 (08)

[6] Electric-field control of tunneling magnetoresistance effect in a Ni/InAs/Ni quantum-dot spin valve [J].

Hamaya, K. ;

Kitabatake, M. ;

Shibata, K. ;

Jung, M. ;

Kawamura, M. ;

Hirakawa, K. ;

Machida, T. ;

Taniyama, T. ;

Ishida, S. ;

Arakawa, Y. .

APPLIED PHYSICS LETTERS, 2007, 91 (02)

[7] Spin transport through a single self-assembled InAs quantum dot with ferromagnetic leads [J].

Hamaya, K. ;

Masubuchi, S. ;

Kawamura, M. ;

Machida, T. ;

Jung, M. ;

Shibata, K. ;

Hirakawa, K. ;

Taniyama, T. ;

Ishida, S. ;

Arakawa, Y. .

APPLIED PHYSICS LETTERS, 2007, 90 (05)

[8] Oscillatory changes in the tunneling magnetoresistance effect in semiconductor quantum-dot spin valves [J].

Hamaya, K. ;

Kitabatake, M. ;

Shibata, K. ;

Jung, M. ;

Kawamura, M. ;

Ishida, S. ;

Taniyama, T. ;

Hirakawa, K. ;

Arakawa, Y. ;

Machida, T. .

PHYSICAL REVIEW B, 2008, 77 (08)

[9] Kondo effect in a semiconductor quantum dot coupled to ferromagnetic electrodes [J].

Hamaya, K. ;

Kitabatake, M. ;

Shibata, K. ;

Jung, M. ;

Kawamura, M. ;

Hirakawa, K. ;

Machida, T. ;

Taniyama, T. ;

Ishida, S. .

APPLIED PHYSICS LETTERS, 2007, 91 (23)

[10] Spin-dependent Coulomb blockade in ferromagnet/normal-metal/ferromagnet double tunnel junctions [J].

Imamura, H ;

Takahashi, S ;

Maekawa, S .

PHYSICAL REVIEW B, 1999, 59 (09) :6017-6020