Radiation Hardness Aspects of Advanced FinFET and UTBOX Devices

被引：0

作者：

Claeys, C. ^{[1
,2
]}

Aoulaiche, M. ^{[1
]}

Simoen, E. ^{[1
]}

Griffoni, A. ^{[1
,3
]}

Kobayashi, D. ^{[4
]}

Mahatme, N. N. ^{[5
]}

Reed, R. A. ^{[5
]}

Schrimpf, R. D. ^{[5
]}

Agopian, P. G. D. ^{[6
,7
]}

Martino, J. A. ^{[7
]}

机构：

[1] IMEC, Kapeldreef 75, B-3001 Louvain, Belgium

[2] Katholieke Univ Leuven, ESAT Dept, B-3001 Leuven, Belgium

[3] OSRAM, I-3110 Treviso, Italy

[4] ISAS JAXA, Sagamihara, Kanagawa 2525210, Japan

[5] Vanderbilt Univ, EE & Comp Sci Dept, Nashville, TN 37212 USA

[6] FEI, Sao Bernardo Do Campo, Brazil

[7] Univ Sao Paulo, LSI PSI USP, Sao Paulo, Brazil

来源：

IEEE INTERNATIONAL SOI CONFERENCE | 2012年

基金：

巴西圣保罗研究基金会;

关键词：

GATE; MUGFETS;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页数：2

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