Thermal sensor employing ring oscillator composed of poly-Si thin-film transistors

被引：12

作者：

Taya, Jun ^{[1
]}

Nakashima, Akihiro ^{[1
]}

Kimura, Mutsumi ^{[1
,2
]}

机构：

[1] Ryukoku Univ, Dept Elect & Informat, Otsu, Shiga 5202194, Japan

[2] Ryukoku Univ, Joint Res Ctr Sci & Technol, Otsu, Shiga 5202194, Japan

来源：

SOLID-STATE ELECTRONICS | 2013年 / 79卷

关键词：

Thermal sensor; Ring oscillator; Poly-Si; Thin-film transistor (TFT); Temperature; Oscillation frequency; TEMPERATURE-DEPENDENCE; SILICON; DISPLAY; TFTS;

D O I：

10.1016/j.sse.2012.07.011

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We propose a thermal sensor employing a ring oscillator composed of poly-Si thin-film transistors (TFTs). First, temperature dependences of transistor characteristics are compared between n-type TFTs with self-aligned and offset gate structures. It is confirmed that the temperature dependence of the offset TFT is larger. Next, a ring oscillator is composed using the n-type offset TFTs. It is clarified that the temperature can be detected by measuring the oscillation frequency. We think that this kind of thermal sensor is available as a digital device. (C) 2012 Elsevier Ltd. All rights reserved.

引用

页码：14 / 17

页数：4

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