Contribution of dangling-bonds to polycrystalline SiC corrosion

被引:8
作者
Kondo, Sosuke [1 ]
Seki, Kotaro [2 ]
Maeda, Yuki [3 ]
Yu, Hao [1 ]
Fukami, Kazuhiro [3 ]
Kasada, Ryuta [1 ]
机构
[1] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan
[2] Tohoku Univ, Dept Quantum Sci & Energy Engn, Sendai, Miyagi 9808579, Japan
[3] Kyoto Univ, Dept Mat Sci & Engn, Kyoto 6068501, Japan
关键词
Lattice defects; Corrosion; Electrochemistry; Ceramics; ELECTRON-SPIN-RESONANCE; INDUCED DEFECTS; SILICON; EVOLUTION; SURFACE; EPR;
D O I
10.1016/j.scriptamat.2020.07.001
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The relationship between lattice defects and the corrosion of SiC irradiated with heavy ions at 400 degrees C and 800 degrees C was investigated using electrochemistry and electron spin resonance spectroscopy. An immersion test in high-pressure hot water was also used to evaluate surface recession. The corrosion current increased monotonically with dangling-bond (DB) density, indicating that DBs were the primary reaction sites. Further, the surface recession rate in hot water increased exponentially with increasing DB density. The dense DBs were found to be surrounded by distorted lattices. These findings indicated that SiC dissolution was further accelerated by the accumulated lattice distortion. (C) 2020 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
引用
收藏
页码:6 / 9
页数:4
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