Electron Raman scattering in a strained ZnO/MgZnO double quantum well

被引：6

作者：

Mojab-abpardeh, M. ^{[1
]}

Karimi, M. J. ^{[1
]}

机构：

[1] Shiraz Univ Technol, Dept Phys, Shiraz 71555313, Iran

来源：

PHYSICA B-CONDENSED MATTER | 2018年 / 531卷

关键词：

Strained ZnO/MgZnO double quantum well; Electron Raman scattering; OPTICAL-PROPERTIES; FIELD; ZNO; POLARIZATION;

D O I：

10.1016/j.physb.2017.12.032

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

In this work, the electron Raman scattering in a strained ZnO/MgZnO double quantum wells is studied. The energy eigenvalues and the wave functions are obtained using the transfer matrix method. The effects of Mg composition, well width and barrier width on the internal electric field in well and barrier layers are investigated. Then, the influences of these parameters on the differential cross-section of electron Raman scattering are studied. Results indicate that the position, magnitude and the number of the peaks depend on the Mg composition, well width and barrier width.

引用

页码：123 / 129

页数：7

共 49 条

[1] Electron Raman scattering in asymmetrical multiple quantum wells system: Frohlich interaction [J].

Betancourt-Riera, R. ;

Riera, R. ;

Rosas, R. ;

Nieto, J. M. .

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2008, 40 (04) :785-794

[2] Electron Raman scattering in asymmetrical multiple quantum wells [J].

Betancourt-Riera, R ;

Rosas, R ;

Marín-Enriquez, I ;

Riera, R ;

Marín, JL .

JOURNAL OF PHYSICS-CONDENSED MATTER, 2005, 17 (28) :4451-4461

[3] Electron Raman scattering in asymmetrical multiple quantum wells system with an external electric field [J].

Betancourt-Riera, Ri. ;

Betancourt-Riera, Re. ;

Riera, R. ;

Rosas, R. .

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2012, 44 (7-8) :1152-1157

[4] Electron Raman scattering in semiconductor quantum wire in an external magnetic field [J].

Betancourt-Riera, Ri ;

Jalil, J. M. Nieto ;

Riera, R. ;

Betancourt-Riera, Re ;

Rosas, R. .

JOURNAL OF PHYSICS-CONDENSED MATTER, 2008, 20 (04)

[5]

Capper P., 2011, ZINC OXIDE MAT ELECT, P315

[6] Numerical Study of ZnO-Based LEDs [J].

Chiaria, Simone ;

Goano, Michele ;

Bellotti, Enrico .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 2011, 47 (05) :661-671

[7]

Coleman VA, 2006, ZINC OXIDE BULK, THIN FILMS AND NANOSTRUCTURES: PROCESSING, PROPERTIES AND APPLICATIONS, P1, DOI 10.1016/B978-008044722-3/50001-4

[8]

Coleman V. A., SEMICOND SCI TECHNOL, V21

[9]

Davis J., 2012, GAN ZNO BASED MAT DE, P413

[10] Suppression of the internal electric field effects in ZnO/Zn0.7Mg0.3O quantum wells by ion-implantation induced intermixing [J].

Davis, J. A. ;

Dao, L. V. ;

Wen, X. ;

Ticknor, C. ;

Hannaford, P. ;

Coleman, V. A. ;

Tan, H. H. ;

Jagadish, C. ;

Koike, K. ;

Sasa, S. ;

Inoue, M. ;

Yano, M. .

NANOTECHNOLOGY, 2008, 19 (05)

← 1 2 3 4 5 →