Comparison of 4.5-kV Press-Pack IGBTs and IGCTs for Medium-Voltage Converters

被引：88

作者：

Filsecker, Felipe ^{[1
]}

Alvarez, Rodrigo ^{[1
]}

Bernet, Steffen ^{[1
]}

机构：

[1] Tech Univ Dresden, Elektrotech Inst Prof Leistungselekt, D-01062 Dresden, Germany

来源：

IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS | 2013年 / 60卷 / 02期

关键词：

Insulated-gate bipolar transistors (IGBTs); integrated gate-commutated thyristors (IGCTs); power semiconductor devices; semiconductor losses; semiconductor measurements; POWER; TECHNOLOGY; DESIGN; DRIVES;

D O I：

10.1109/TIE.2012.2187417

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

Recently developed insulated-gate bipolar transistor (IGBT) press-pack (PP) devices with a blocking voltage of 4.5 kV are being used in medium-voltage converters as an alternative to integrated gate-commutated thyristors (IGCTs). This paper presents an overview of PP packaging and both semiconductor technologies. A quantitative comparison of these devices is achieved through measurements for a 4.5-kV 1.2-kA IGBT and a 4.5-kV 4-kA IGCT. The laboratory test bench for the switching transient characterization at a dc-link voltage of 2.5 kV and currents up to 3 kA is described. Conduction, blocking, and switching behavior for junction temperatures up to 125 degrees C are investigated. The IGCT and the IGBT are tested using a di/dt-limiting clamp circuit. In addition, the IGBT is tested in hard switching mode.

引用

页码：440 / 449

页数：10

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