Synthesis of titanium silicon carbide Ti3SiC2 under isothermal sintering

被引：1

作者：

Ivanova, I. I. ^{[1
]}

Demidik, A. N. ^{[1
]}

Karpets, M. V. ^{[1
]}

Kopylova, L. I. ^{[1
]}

Krylova, N. A. ^{[1
]}

Polyshko, A. P. ^{[1
]}

Firstov, S. A. ^{[1
]}

机构：

[1] Natl Acad Sci Ukraine, Frantsevich Inst Problems Mat Sci, Kiev, Ukraine

来源：

POWDER METALLURGY AND METAL CERAMICS | 2012年 / 51卷 / 7-8期

关键词：

sintering; refractory compounds; complex carbides; PHASES;

D O I：

10.1007/s11106-012-9453-y

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The synthesis of Ti3SiC2 in vacuum is studied. The influence of the starting powders, charge composition, and sintering temperature on the phase composition of the material is analyzed. It is established that titanium hydride used instead of metal titanium substantially decreases the onset synthesis temperature and produces almost single-phase material after sintering at 1200-1250A degrees C. However, this Ti3SiC2 does not have adequate density and strength. Practically single-phase Ti3SiC2 with high density and strength is synthesized in the range 1350-1400A degrees C when the silicon content of the charge is higher than its stoichiometric amount by a factor of 1.2-1.25. It is shown that single-phase Ti3SiC2 or material with the required TiC content can be synthesized by variation of silicon content of the charge.

引用

页码：437 / 446

页数：10