Atomic scale analysis of the effect of the SiO2 passivation treatment on InAs/GaSb superlattice mesa sidewall

被引：27

作者：

Herrera, M. ^{[1
]}

Chi, M. ^{[1
,2
]}

Bonds, M. ^{[1
]}

Browning, N. D. ^{[1
,2
]}

Woolman, Joseph N. ^{[3
]}

Kvaas, Robert E. ^{[3
]}

Harris, Sean F. ^{[3
]}

Rhiger, David R. ^{[3
]}

Hill, Cory J. ^{[4
]}

机构：

[1] Univ Calif Davis, Dept Chem Engn & Mat Sci, Davis, CA 95616 USA

[2] Lawrence Livermore Natl Lab, Chem Mat & Life Sci Directorate, Livermore, CA 94550 USA

[3] Raytheon Vis Syst, Goleta, CA 93117 USA

[4] CALTECH, Jet Prop Lab, Pasadena, CA 91109 USA

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 09期

关键词：

D O I：

10.1063/1.2977589

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have analyzed by electron microscopy techniques the effect of the deposition of a SiO(2) passivation layer on an InAs/GaSb type-II superlattice (SL) mesa with applications as a photodetector. Our images reveal good conformal coverage by the SiO(2) upon an undulating edge of the SL mesa. However, we have observed scarce As clusters at the interface between the SL mesa and the passivation layer and some degree of oxidation of the mesa sidewall. The strong reduction in surface leakage currents demonstrates that the observed imperfections do not have a substantial detrimental effect on the passivation capabilities of the SiO(2) layer. (C) 2008 American Institute of Physics.

引用

页数：3

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