Hole transport materials with high glass transition temperatures for highly stable organic light-emitting diodes

被引：25
作者：
Kwak, Jeonghun [1 ]
Lyu, Yi-Yeol [2 ]
Noh, Seunguk [3 ]
Lee, Hyunkoo [3 ]
Park, Myeongjin [3 ]
Choi, Bonggoo [5 ]
Char, Kookheon [4 ]
Lee, Changhee [3 ]
机构：
[1] Dong A Univ, Dept Elect Engn, Pusan 604714, South Korea
[2] Unitech Co Ltd, Ansan 425100, Gyeonggi Do, South Korea
[3] Seoul Natl Univ, ISRC, Sch Elect & Comp Engn, Seoul 151744, South Korea
[4] Seoul Natl Univ, Sch Chem & Biol Engn, Intelligent Hybrids Res Ctr, Seoul 151744, South Korea
[5] Yonsei Univ, Dept Chem & Biomol Engn, Elect Mat Lab, Seoul 120749, South Korea
来源：
THIN SOLID FILMS | 2012年 / 520卷 / 24期
基金：
新加坡国家研究基金会;
关键词：
Organic light-emitting diode; Hole transport material; High glass transition temperature; High stability; DURABILITY; DEVICES;
D O I：
10.1016/j.tsf.2012.07.130
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Two hole transport materials with high glass transition temperatures (T-g similar to 200 degrees C) have been synthesized by replacing the phenyl groups of 4,4'-bis[N-(1-naphthyl-1)-N'-phenyl-amino]-biphenyl (alpha-NPD) with the bulkier phenanthrene (N,N'-di(naphthalene-1-yl)-N,N'-di(phenanthrene-9-yl)biphenyl-4,4'-diamine, NPhenD) or anthracene (N,N'-di(anthracene-9-yl)-N,N'-di(naphthalene-1-yl)biphenyl-4,4'-diamine, NAD). The organic light-emitting diodes (OLEDs) using these hole transport materials exhibited stable operation at high temperatures up to 420 K, improved device lifetimes, and reduced operating voltage changes compared to the conventional hole transport materials owing to their high T-g. Although NAD has quite small bandgap as a hole transport material, superior thermal properties of NPhenD and NAD suggest that they can be promising materials for highly stable and high temperature-durable OLEDs and other organic optoelectronic devices. (C) 2012 Elsevier B.V. All rights reserved.
引用
收藏
页码：7157 / 7163
页数：7
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