Optical and Electrical Properties of Sn-Doped Zinc Oxide Single Crystals

被引:8
|
作者
Haseman, M. S. [1 ]
Saadatkia, Pooneh [1 ,2 ]
Warfield, J. T. [1 ]
Lawrence, J. [3 ]
Hernandez, A. [1 ,2 ]
Jellison, G. E. [4 ]
Boatner, L. A. [4 ]
Selim, F. A. [1 ,2 ]
机构
[1] Bowling Green State Univ, Dept Phys & Astron, Bowling Green, OH 43403 USA
[2] Bowling Green State Univ, Ctr Photochem Sci, Bowling Green, OH 43403 USA
[3] Univ Toledo, Ctr Mat & Sensors Characterizat, 2801 W Bancroft St, Toledo, OH 43606 USA
[4] Oak Ridge Natl Lab, Mat Sci & Technol Div, Oak Ridge, TN 37831 USA
基金
美国国家科学基金会;
关键词
Semiconducting oxides; Sn-doped ZnO; Sn concentration; thermoluminescence spectroscopy; color center; THIN-FILMS; BAND-GAP; ZNO; LUMINESCENCE; DEPOSITION;
D O I
10.1007/s11664-017-5942-6
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Sn dopant in ZnO may significantly improve the n-type conductivity of ZnO through a characteristic double effect. However, studies on bulk Sn-doped ZnO are rare, and the effect of Sn doping on the optoelectronic properties of bulk ZnO is not well understood. In this work, the effect of Sn doping on the optical and electrical properties of ZnO bulk single crystals was investigated through optical absorption spectroscopy, Hall-effect measurements, and thermoluminescence (TL) spectroscopy. Undoped and Sn-doped ZnO single crystals were grown by chemical vapor transport method and characterized by x-ray diffraction analysis. The Sn doping level in the crystals was evaluated by inductively coupled plasma mass spectroscopy measurements. Hall-effect measurements revealed an increase in conductivity and carrier concentration with increasing Sn doping, while TL measurements identified a few donor species in the crystals with donor ionization energy ranging from 35 meV to 118 meV. Increasing Sn doping was also associated with a color change of single crystals from colorless to dark blue.
引用
收藏
页码:1497 / 1504
页数:8
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