Optical and Electrical Properties of Sn-Doped Zinc Oxide Single Crystals

被引：8

作者：

Haseman, M. S. ^{[1
]}

Saadatkia, Pooneh ^{[1
,2
]}

Warfield, J. T. ^{[1
]}

Lawrence, J. ^{[3
]}

Hernandez, A. ^{[1
,2
]}

Jellison, G. E. ^{[4
]}

Boatner, L. A. ^{[4
]}

Selim, F. A. ^{[1
,2
]}

机构：

[1] Bowling Green State Univ, Dept Phys & Astron, Bowling Green, OH 43403 USA

[2] Bowling Green State Univ, Ctr Photochem Sci, Bowling Green, OH 43403 USA

[3] Univ Toledo, Ctr Mat & Sensors Characterizat, 2801 W Bancroft St, Toledo, OH 43606 USA

[4] Oak Ridge Natl Lab, Mat Sci & Technol Div, Oak Ridge, TN 37831 USA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2018年 / 47卷 / 02期

基金：

美国国家科学基金会;

关键词：

Semiconducting oxides; Sn-doped ZnO; Sn concentration; thermoluminescence spectroscopy; color center; THIN-FILMS; BAND-GAP; ZNO; LUMINESCENCE; DEPOSITION;

D O I：

10.1007/s11664-017-5942-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Sn dopant in ZnO may significantly improve the n-type conductivity of ZnO through a characteristic double effect. However, studies on bulk Sn-doped ZnO are rare, and the effect of Sn doping on the optoelectronic properties of bulk ZnO is not well understood. In this work, the effect of Sn doping on the optical and electrical properties of ZnO bulk single crystals was investigated through optical absorption spectroscopy, Hall-effect measurements, and thermoluminescence (TL) spectroscopy. Undoped and Sn-doped ZnO single crystals were grown by chemical vapor transport method and characterized by x-ray diffraction analysis. The Sn doping level in the crystals was evaluated by inductively coupled plasma mass spectroscopy measurements. Hall-effect measurements revealed an increase in conductivity and carrier concentration with increasing Sn doping, while TL measurements identified a few donor species in the crystals with donor ionization energy ranging from 35 meV to 118 meV. Increasing Sn doping was also associated with a color change of single crystals from colorless to dark blue.

引用

页码：1497 / 1504

页数：8

共 34 条

[1] Growth and characterization of nano-structured Sn doped ZnO
Acharya, A. D.
Moghe, Shweta
Panda, Richa
Shrivastava, S. B.
Gangrade, Mohan
Shripathi, T.
Phase, D. M.
Ganesan, V.
[J]. JOURNAL OF MOLECULAR STRUCTURE, 2012, 1022 : 8 - 15
[2] Study on the doping effect of Sn-doped ZnO thin films
Ajili, Mejda
Castagne, Michel
Turki, Najoua Kamoun
[J]. SUPERLATTICES AND MICROSTRUCTURES, 2013, 53 : 213 - 222
[3] Aksoy S, 2010, OPT APPL, V40, P7
[4] The calculation of band gap energy in zinc oxide films
Arif, Ali
Belahssen, Okba
Gareh, Salim
Benramache, Said
[J]. JOURNAL OF SEMICONDUCTORS, 2015, 36 (01)
[5] High sensitivity thermoluminescence dosimetry
Bos, AJJ
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2001, 184 (1-2) : 3 - 28
[6] Chahmat N., 2012, Journal of Modern Physics, V3, P1781, DOI [10.4236/jmp.2012.311222, DOI 10.4236/JMP.2012.311222]
[7] Atomic layer deposition of Ga-doped ZnO transparent conducting oxide substrates for CdTe-based photovoltaics
Chalker, Paul R.
Marshall, Paul A.
Romani, Simon
Roberts, Joseph W.
Irvine, Stuart J. C.
Lamb, Daniel A.
Clayton, Andrew J.
Williams, Paul A.
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2013, 31 (01):
[8] Effect of Si doping on electrical and optical properties of ZnO thin films grown by sequential pulsed laser deposition
Das, A. K.
Misra, P.
Kukreja, L. M.
[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2009, 42 (16)
[9] Atomic Layer Deposition of Al-doped ZnO Films: Effect of Grain Orientation on Conductivity
Dasgupta, Neil P.
Neubert, Sebastian
Lee, Wonyoung
Trejo, Orlando
Lee, Jung-Rok
Prinz, Fritz B.
[J]. CHEMISTRY OF MATERIALS, 2010, 22 (16) : 4769 - 4775
[10] Influence of Al Doping on the Properties of ZnO Thin Films Grown by Atomic Layer Deposition
Geng, Yang
Guo, Li
Xu, Sai-Sheng
Sun, Qing-Qing
Ding, Shi-Jin
Lu, Hong-Liang
Zhang, David Wei
[J]. JOURNAL OF PHYSICAL CHEMISTRY C, 2011, 115 (25) : 12317 - 12321

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