Development of a novel high optical quality ZnO thin films by PLD for III-V opto-electronic devices

被引:70
作者
Ramamoorthy, K
Sanjeeviraja, C [1 ]
Jayachandran, M
Sankaranarayanan, K
Misra, P
Kukreja, LM
机构
[1] Alagappa Univ, Dept Phys, Karaikkudi 630003, Tamil Nadu, India
[2] Cent Electro Chem Res Inst, EDMS Div, Karaikkudi 630006, Tamil Nadu, India
[3] Alagappa Univ, Crystal Res Ctr, Karaikkudi 630003, Tamil Nadu, India
[4] Govt India, Thin Film Lab, Dept Atom Energy, Ctr Adv Technol, Indore 452013, India
关键词
laser epitaxy; semiconducting materials; thin film structure and morphology; optical materials; solar cells;
D O I
10.1016/j.cap.2004.12.010
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A novel highly transparent intrinsic zinc oxide (ZnO) thin films (without adding any dopants and annealing) were grown by pulsed laser deposition (PLD) technique using Johnson Matthey "specpure"- grade ZnO pellets. The effects of substrate temperatures on zinc oxide thin film growth, optical transmission, absorption, reflection and photoluminescence properties were studied. As well as the feasibility of developing high quality transparent oxide thin films was also studied simultaneously. The optical transmission window of such obtained films, i.e., T% (max) >= 95% is broader than those of other transparent conducting oxides such as indium tin oxide (ITO) and absolute rivals that of the most transparent conducting oxides (TCOs). Also as a novelty merit, we want to emphasize as a interesting, significant and novel physical effect that the average optical transmittance of ZnO thin films rivals that of the most transmittive TCO films reported to date for this conductivity level (of the order of 10(3) Omega(-1) cm(-1)). Also this is the first time that we have applied these PLD prepared ZnO thin films to iso and hetero semiconductor-insulator-semiconductor (SIS) type solar cells as transparent conducting oxide (TCO) coatings. From optical studies, we know that the films were act as highly anti-reflective coatings. From photoluminescence study, we confirmed the purity and high electrical conductivity of the deposited thin films of ZnO. The optical parameter values for the films were calculated, tabulated and graphically emphasized. Supplementary studies on surface, electrical, structural and internal morphological properties of zinc oxide thin film growth correlated with optical transmission, absorption, reflection and photoluminescence properties gives added advantages to this work. We hope that surely these data should be helpful either as a scientific or technical basis in the semiconductor processing and technology. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码:103 / 108
页数:6
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