A 0.8 THz fMAX SiGe HBT Operating at 4.3 K

被引：52

作者：

Chakraborty, Partha S. ^{[1
]}

Cardoso, Adilson S. ^{[1
]}

Wier, Brian R. ^{[1
]}

Omprakash, Anup P. ^{[1
]}

Cressler, John D. ^{[1
]}

Kaynak, Mehmet ^{[2
]}

Tillack, Bernd ^{[2
]}

机构：

[1] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA

[2] IHP Microelect GmbH, D-15236 Frankfurt, Germany

来源：

IEEE ELECTRON DEVICE LETTERS | 2014年 / 35卷 / 02期

关键词：

Cryogenic; SiGe HBT; terahertz; BiCMOS;

D O I：

10.1109/LED.2013.2295214

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We demonstrate record ac performance (0.8 THz) for a silicon-germanium heterojunction bipolar transistor (SiGe HBT) operating at cryogenic temperatures. An extracted peak f(MAX) of 798 GHz (peak f(T) of 479 GHz) at 4.3 K was measured for a device with a BVCEO of 1.67 V. This scaled SiGe HBT also exhibits excellent thermal properties, as required from an electro-thermal reliability perspective. Taken together, these results strongly suggest that at the limits of scaling, robust, and manufacturable SiGe HBTs designed for room temperature operation are likely to achieve THz speeds.

引用

页码：151 / 153

页数：3

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