Adsorption of Co on Si(100) surface

被引：5

作者：

Wei, SY ^{[1
]}

Yang, ZX

Dai, XQ

Zhang, KM

机构：

[1] Henan Normal Univ, Dept Phys, Xinxiang 453002, Peoples R China

[2] Fudan Univ, Appl Surface Phys Lab Natl Key Lab, Shanghai 200433, Peoples R China

来源：

SURFACE SCIENCE | 2002年 / 504卷 / 1-3期

关键词：

chemisorption; cobalt; silicon; low index single crystal surfaces; metallic films;

D O I：

10.1016/S0039-6028(01)01672-7

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The adsorption of one monolayer Co atoms on an ideal Si(1 0 0) surface is studied by using the self-consistent tight binding linear muffin-tin orbital method. Energies of adsorption systems of a Co atom on different sites are calculated. It is found that the adsorbed Co atoms are more favorable on C site (fourfold site) than on any other sites oil Si(1 0 0) surface and a Co. Si mixed layer might exist at Co/Si(1 0 0) interface. The charge transfer and the layer projected density of states are also studied. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：37 / 41

页数：5

共 12 条

[1] EXPLICIT, 1ST-PRINCIPLES TIGHT-BINDING THEORY [J].

ANDERSEN, OK ;

JEPSEN, O .

PHYSICAL REVIEW LETTERS, 1984, 53 (27) :2571-2574

[2] ILLUSTRATION OF THE LINEAR-MUFFIN-TIN-ORBITAL TIGHT-BINDING REPRESENTATION - COMPACT ORBITALS AND CHARGE-DENSITY IN SI [J].

ANDERSEN, OK ;

PAWLOWSKA, Z ;

JEPSEN, O .

PHYSICAL REVIEW B, 1986, 34 (08) :5253-5269

[3] Co interaction with clean silicon surfaces [J].

Dolbak, AE ;

Olshanetsky, BZ ;

Teys, SA .

SURFACE SCIENCE, 1997, 373 (01) :43-55

[4]

Dolbak AE, 1997, PHYS LOW-DIMENS STR, V3-4, P113

[5] Simple setup combining ferromagnetic resonance and surface magneto-optic Kerr effect for measurements of magnetic properties of ultrathin films in ultrahigh vacuum [J].

Li, M ;

Wang, GC .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1996, 14 (06) :3288-3290

[6] ADSORPTION OF A MONOLAYER OF IRON ON BETA-SIC(100) SURFACES [J].

LU, WC ;

ZHANG, KM ;

XIE, XD .

PHYSICAL REVIEW B, 1993, 48 (24) :18159-18163

[7] PREPARATION-DEPENDENT CO/SI(100) (2X1) INTERFACE GROWTH - SPONTANEOUS SILICIDE FORMATION VERSUS INTERSTITIAL-SITE MECHANISM [J].

MEYERHEIM, HL ;

DOBLER, U ;

PUSCHMANN, A .

PHYSICAL REVIEW B, 1991, 44 (11) :5738-5744

[8] ELECTRONIC-STRUCTURE CALCULATIONS FOR AMORPHOUS SOLIDS USING THE RECURSION METHOD AND LINEAR MUFFIN-TIN ORBITALS - APPLICATION TO FE80B20 [J].

NOWAK, HJ ;

ANDERSEN, OK ;

FUJIWARA, T ;

JEPSEN, O ;

VARGAS, P .

PHYSICAL REVIEW B, 1991, 44 (08) :3577-3598

[9] INITIAL-STAGES OF EPITAXIAL COSI(2) FORMATION ON SI(100) SURFACES [J].

RANGELOV, G ;

AUGUSTIN, P ;

STOBER, J ;

FAUSTER, T .

PHYSICAL REVIEW B, 1994, 49 (11) :7535-7542

[10] Nucleation and growth of CoSi2 on Si(100) studied by scanning tunneling microscopy [J].

Scheuch, V ;

Voigtlander, B ;

Bonzel, HP .

SURFACE SCIENCE, 1997, 372 (1-3) :71-82

← 1 2 →