Monocrystalline thin films of ZnSe and ZnO grown by atomic layer epitaxy

被引：13

作者：

Kopalko, K

Godlewski, M

Guziewicz, E

Lusakowska, E

Paszkowicz, W

Domagala, J

Dynowska, E

Szczerbakow, A

Wójcik, A

Phillips, MR

机构：

[1] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland

[2] Cardinal S Wyszynski Univ, Coll Sci, Fac Math & Nat Sci, Warsaw, Poland

[3] Los Alamos Natl Lab, Los Alamos, NM 87545 USA

[4] UTS, Microstruct Anal Unit, Sydney, NSW, Australia

来源：

VACUUM | 2004年 / 74卷 / 02期

关键词：

atomic layer epitaxy; ZnSe; ZnO; synthesis; characterization;

D O I：

10.1016/j.vacuum.2003.12.139

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report on the growth of monocrystalline thin films of ZnSe and ZnO by atomic layer epitaxy by simple reaction between elemental precursors. Structural and optical properties of these films are discussed with reference to the investigations performed with atomic force microscopy, scanning electron microscopy, cathodoluminescence and photolummescence. (C) 2004 Elsevier Ltd. All rights reserved.

引用

页码：269 / 272

页数：4

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