Growth and spectral characteristics of KYb(WO4)2 crystal

被引:5
作者
Huang, Y. S. [1 ,2 ]
Zhang, L. Z. [1 ]
Lin, Z. B. [1 ]
Wang, G. F. [1 ]
机构
[1] Chinese Acad Sci, Fujian Inst Res Struct Matter, Key State Lab Struct Chem, Fuzhou 350002, Fujian, Peoples R China
[2] Chinese Acad Sci, Grad Sch, Beijing 100039, Peoples R China
关键词
KYb(WO4)(2) crystal; Spectral parameters; Growth from high temperature solutions; Solid state laser materials;
D O I
10.1179/143307508X362774
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The present paper reports the growth and spectroscopic properties of KYb(WO4)(2) crystal. The KYb(WO4)(2) crystal with dimensions of 32629612 mm was grown from a mixed flux of K2WO4 and KF by the TSSG method. The spectroscopic properties of KYb(WO4)(2) crystals were investigated. The absorption and emission cross-sections of KYb(WO4)(2) crystal are 4.32 x 10(-20) cm(2) at 981 nm and 3.69 x 10(-20) cm(2) at 1024 nm for E//X polarisation respectively. The laser parameters of KYb(WO4)(2) crystal were evaluated. These results suggest KYb(WO4)(2) crystal as a potential candidate for microchip laser medium.
引用
收藏
页码:162 / 165
页数:4
相关论文
共 20 条
[1]   Overview of the best Yb3+-doped laser crystals [J].
Brenier, A ;
Boulon, G .
JOURNAL OF ALLOYS AND COMPOUNDS, 2001, 323 :210-213
[2]   EVALUATION OF ABSORPTION AND EMISSION PROPERTIES OF YB-3+ DOPED CRYSTALS FOR LASER APPLICATIONS [J].
DELOACH, LD ;
PAYNE, SA ;
CHASE, LL ;
SMITH, LK ;
KWAY, WL ;
KRUPKE, WF .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1993, 29 (04) :1179-1191
[3]   Laser operation and Raman self-frequency conversion in Yb:KYW microchip laser [J].
Grabtchikov, AS ;
Kuzmin, AN ;
Lisinetskii, VA ;
Orlovich, VA ;
Demidovich, AA ;
Danailov, MB ;
Eichler, HJ ;
Bednarkiewicz, A ;
Strek, W ;
Titov, AN .
APPLIED PHYSICS B-LASERS AND OPTICS, 2002, 75 (6-7) :795-797
[4]   Growth and spectral properties of Er3+/Yb3+-codoped KY(WO4)2 crystal [J].
Han, XM ;
Wang, GF ;
Tsuboi, T .
JOURNAL OF CRYSTAL GROWTH, 2002, 242 (3-4) :412-420
[5]   Determination of laser parameters of ytterbium-doped oxide crystalline materials [J].
Haumesser, PH ;
Gaumé, R ;
Viana, B ;
Vivien, D .
JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS, 2002, 19 (10) :2365-2375
[6]  
KULESHOW NV, 1997, OPT LETT, V17, P1317
[7]   Non-Gaussian fundamental laser mode oscillation in end-pumped Nd:YVO4 microchip laser [J].
Martel, G ;
Labbé, C ;
Sanchez, F ;
Fromager, M ;
Aït-Ameur, K .
OPTICS COMMUNICATIONS, 2002, 201 (1-3) :117-127
[8]  
MCCUMBER DE, 1964, PHYS REV, V136, P954
[9]   Microchip lasers and their applications in optical microsystems [J].
Molva, E .
OPTICAL MATERIALS, 1999, 11 (2-3) :289-299
[10]   Laser demonstration of Yb3Al5O12 (YbAG) and materials properties of highly doped Yb:YAG [J].
Patel, FD ;
Honea, EC ;
Speth, J ;
Payne, SA ;
Hutcheson, R ;
Equall, R .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 2001, 37 (01) :135-144