High thermoelectric performance in tellurium free p-type AgSbSe2

被引：221
作者：
Guin, Satya N. [1 ]
Chatterjee, Arindom [1 ]
Negi, Devendra Singh [2 ,3 ]
Datta, Ranjan [2 ,3 ]
Biswas, Kanishka [1 ]
机构：
[1] Jawaharlal Nehru Ctr Adv Sci Res, New Chem Unit, Bangalore 560064, Karnataka, India
[2] Jawaharlal Nehru Ctr Adv Sci Res, Chem & Phys Mat Unit, Bangalore 560064, Karnataka, India
[3] Jawaharlal Nehru Ctr Adv Sci Res, Int Ctr Mat Sci, Bangalore 560064, Karnataka, India
来源：
ENERGY & ENVIRONMENTAL SCIENCE | 2013年 / 6卷 / 09期
关键词：
FIGURE-OF-MERIT; ENHANCED FIGURE; PBSE; NANOSTRUCTURES; ELEMENTS; AGSBTE2; SYSTEMS; PBTE; CA;
D O I：
10.1039/c3ee41935e
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Enhanced electrical transport and ultra low thermal conductivity resulted in a high thermoelectric figure of merit, ZT, of similar to 1 and similar to 1.15 at similar to 680 K in 4 mol% Pb and 2 mol% Bi doped AgSbSe2, which are 150 and 190% higher compared to that of the pristine sample, respectively. With this excellent thermoelectric performance, p-type AgSbSe2, constituting earth abundant Se, offers promise to replace traditional metal tellurides containing expensive and scarce Te for mid temperature (350-700 K) thermoelectric applications.
引用
收藏
页码：2603 / 2608
页数：6
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