High thermoelectric performance in tellurium free p-type AgSbSe2

被引：229

作者：

Guin, Satya N. ^{[1
]}

Chatterjee, Arindom ^{[1
]}

Negi, Devendra Singh ^{[2
,3
]}

Datta, Ranjan ^{[2
,3
]}

Biswas, Kanishka ^{[1
]}

机构：

[1] Jawaharlal Nehru Ctr Adv Sci Res, New Chem Unit, Bangalore 560064, Karnataka, India

[2] Jawaharlal Nehru Ctr Adv Sci Res, Chem & Phys Mat Unit, Bangalore 560064, Karnataka, India

[3] Jawaharlal Nehru Ctr Adv Sci Res, Int Ctr Mat Sci, Bangalore 560064, Karnataka, India

来源：

ENERGY & ENVIRONMENTAL SCIENCE | 2013年 / 6卷 / 09期

关键词：

FIGURE-OF-MERIT; ENHANCED FIGURE; PBSE; NANOSTRUCTURES; ELEMENTS; AGSBTE2; SYSTEMS; PBTE; CA;

D O I：

10.1039/c3ee41935e

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Enhanced electrical transport and ultra low thermal conductivity resulted in a high thermoelectric figure of merit, ZT, of similar to 1 and similar to 1.15 at similar to 680 K in 4 mol% Pb and 2 mol% Bi doped AgSbSe2, which are 150 and 190% higher compared to that of the pristine sample, respectively. With this excellent thermoelectric performance, p-type AgSbSe2, constituting earth abundant Se, offers promise to replace traditional metal tellurides containing expensive and scarce Te for mid temperature (350-700 K) thermoelectric applications.

引用

页码：2603 / 2608

页数：6

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