Fabrication of Nitrogen Doped p-ZnO and ZnO Light-Emitting Diodes on Sapphire

被引：5

作者：

Wei, Z. P. ^{[1
,2
,3
]}

Lu, Y. M. ^{[1
]}

Shen, D. Z. ^{[1
]}

Zhang, Z. Z. ^{[1
]}

Yao, B. ^{[1
]}

Li, B. H. ^{[1
]}

Zhang, J. Y. ^{[1
]}

Zhao, D. X. ^{[1
]}

Fan, X. W. ^{[1
]}

Tang, Z. K. ^{[4
]}

机构：

[1] Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, Key Lab Excited State Proc, Changchun 130033, Peoples R China

[2] Chinese Acad Sci, Grad Sch, Beijing 100039, Peoples R China

[3] Changchun Univ Sci & Technol, Dept Phys, Changchun 130022, Peoples R China

[4] Hong Kong Univ Sci & Technol, Dept Phys, Kowloon, Hong Kong, Peoples R China

来源：

JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2008年 / 53卷 / 05期

关键词：

P-MBE; P-type ZnO; LED; Electroluminescence;

D O I：

10.3938/jkps.53.3038

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Nitrogen-doped p-type ZnO thin films were grown on c-plane sapphire (Al2O3) substrates by plasma-assistant molecular beam epitaxy, where O-2 and N-2 were introduced via a RF plasma source simultaneously. In situ optical emission spectra of the plasma were employed to monitor the chemical species in the active gas sources, one of the most important growth parameters. By adjusting the growth parameters, we confirm the optimal condition for p-type doping growth. The reproducible p-type ZnO thin films have the hole concentration (N-A - N-D) up to 1.0 x 10(18) cm(-3) and the resistivity of 6 Omega cm. A ZnO LED was fabricated by depositing undoped n-type ZnO on the p-type layer. Electroluminescence spectra centered about 430 nm were obtained even at 350 K.

引用

页码：3038 / 3042

页数：5

共 50 条

[41] Electroluminescence from n-ZnO/p-ZnO : Sb homojunction light emitting diode on sapphire substrate with metal-organic precursors doped p-type ZnO layer grown by MOCVD technology
Zhao, J. Z.
Liang, H. W.
Sun, J. C.
Bian, J. M.
Feng, Q. J.
Hu, L. Z.
Zhang, H. Q.
Liang, X. P.
Luo, Y. M.
Du, G. T.
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2008, 41 (19)
[42] ZnO nanorod light-emitting diodes fabricated by electrochemical approaches
Guo, Honghui
Zhou, Jianzhang
Lin, Zhonghua
ELECTROCHEMISTRY COMMUNICATIONS, 2008, 10 (01) : 146 - 150
[43] Materials and process development for ZnMgO/ZnO light-emitting diodes
Wang, Yu-Lin
Ren, Fan
Kim, H. S.
Norton, David P.
Pearton, Steve J.
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2008, 14 (04) : 1048 - 1052
[44] Contact light-emitting diodes based on vertical ZnO nanorods
Panin, G. N.
Cho, Hak Dong
Lee, Sang Wuk
Kang, Tae Won
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2014, 64 (10) : 1403 - 1406
[45] Contact light-emitting diodes based on vertical ZnO nanorods
G. N. Panin
Hak Dong Cho
Sang Wuk Lee
Tae Won Kang
Journal of the Korean Physical Society, 2014, 64 : 1403 - 1406
[46] Investigation of ZnO-based Ultraviolet Light-Emitting Diodes
Lee, Ching-Ting
Chang, Hao-Yu
OXIDE-BASED MATERIALS AND DEVICES V, 2014, 8987
[47] Recent Advances in ZnO-Based Light-Emitting Diodes
Choi, Yong-Seok
Kang, Jang-Won
Hwang, Dae-Kue
Park, Seong-Ju
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2010, 57 (01) : 26 - 41
[48] ZnO/MgZnO p-n junction light-emitting diodes fabricated on sapphire substrates by pulsed laser deposition technique
Shukla, Gaurav
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2009, 42 (07)
[49] Plasma treatment of p-GaN/n-ZnO light-emitting diodes
Leung, Yu Hang
Ng, Alan M. C.
Djurisic, Aleksandra B.
Chan, Wai Kin
Fong, Patrick W. K.
Lui, Hsien Fei
Surya, Charles C.
OXIDE-BASED MATERIALS AND DEVICES V, 2014, 8987
[50] A Comparative Study on p-ZnO:AlAs/n-ZnO:Al and p-ZnO:AlAsN/n-ZnO:Al Bilayer Homojunction Diodes Performance
Balakrishnan, L.
Gowrishankar, S.
Gopalakrishnan, N.
ECS SOLID STATE LETTERS, 2014, 3 (04) : Q20 - Q23

← 1 2 3 4 5 →