Fabrication of Nitrogen Doped p-ZnO and ZnO Light-Emitting Diodes on Sapphire

被引：5

作者：

Wei, Z. P. ^{[1
,2
,3
]}

Lu, Y. M. ^{[1
]}

Shen, D. Z. ^{[1
]}

Zhang, Z. Z. ^{[1
]}

Yao, B. ^{[1
]}

Li, B. H. ^{[1
]}

Zhang, J. Y. ^{[1
]}

Zhao, D. X. ^{[1
]}

Fan, X. W. ^{[1
]}

Tang, Z. K. ^{[4
]}

机构：

[1] Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, Key Lab Excited State Proc, Changchun 130033, Peoples R China

[2] Chinese Acad Sci, Grad Sch, Beijing 100039, Peoples R China

[3] Changchun Univ Sci & Technol, Dept Phys, Changchun 130022, Peoples R China

[4] Hong Kong Univ Sci & Technol, Dept Phys, Kowloon, Hong Kong, Peoples R China

来源：

JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2008年 / 53卷 / 05期

关键词：

P-MBE; P-type ZnO; LED; Electroluminescence;

D O I：

10.3938/jkps.53.3038

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Nitrogen-doped p-type ZnO thin films were grown on c-plane sapphire (Al2O3) substrates by plasma-assistant molecular beam epitaxy, where O-2 and N-2 were introduced via a RF plasma source simultaneously. In situ optical emission spectra of the plasma were employed to monitor the chemical species in the active gas sources, one of the most important growth parameters. By adjusting the growth parameters, we confirm the optimal condition for p-type doping growth. The reproducible p-type ZnO thin films have the hole concentration (N-A - N-D) up to 1.0 x 10(18) cm(-3) and the resistivity of 6 Omega cm. A ZnO LED was fabricated by depositing undoped n-type ZnO on the p-type layer. Electroluminescence spectra centered about 430 nm were obtained even at 350 K.

引用

页码：3038 / 3042

页数：5

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