Interface State in Metal-Oxide-Nitride-Silicon Memories Induced by Hole Injection during Program/Erase Cycle Stress

被引：12

作者：

Fujii, Shosuke ^{[1
]}

Fujitsuka, Ryota ^{[2
]}

Sekine, Katsuyuki ^{[2
]}

Koyama, Masato ^{[1
]}

Yasuda, Naoki ^{[2
]}

机构：

[1] Toshiba Co Ltd, Adv LSI Technol Lab, Yokohama, Kanagawa 2358522, Japan

[2] Toshiba Co Ltd, Semicond & Storage Prod Co, Yokohama, Kanagawa 2358522, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2012年 / 51卷 / 12期

关键词：

GENERATION; CHARGE; TANOS; ERASE; NBTI;

D O I：

10.1143/JJAP.51.124302

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The mechanism of interface-state generation in metal-oxide-nitride-silicon (MONOS) memories by program/erase (P/E) cycling was experimentally examined, using the charge measurement technique we developed that allows direct measurement of the amount of charges flowing during P/E operation. The amount of interface state was found to have a strong correlation with the amount of charges flowing during erase operation, irrespective of pulse voltage, pulse width and number of P/E cycles. It was also found that the amount of interface states generated by P/E cycling increases as hole fluence dominates erase operation. These findings suggest that hole injection from Si substrate, rather than electron detrapping from SiN layer or impact-ionized hot hole, is the main cause of the interface-state generation. (C) 2012 The Japan Society of Applied Physics

引用

页数：4

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