Combining 2D and 3D Device Simulations for Optimizing LDMOS Design

被引：0
|
作者：
Lin, Chin-Che [1 ]
Sheu, Gene [1 ]
Yang, Shao-Ming [1 ]
Guo, Yu-Feng [2 ]
机构：
[1] Asia Univ, Dept Comp Sci & Informat Engn, Taichung 41354, Taiwan
[2] Nanjing Univ Posts & Telecommun, Sch Elect Sci & Engn, Nanjing 210003, Peoples R China
来源：
CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE 2010 (CSTIC 2010) | 2010年 / 27卷 / 01期
关键词：
D O I：
10.1149/1.3360607
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
Lateral DMOS power devices can achieve high breakdown voltage by optimizing the two dimensional (2D) device parameters in accordance with the RESURF principle. However, in practice, it is also necessary to optimize the three dimensional (3D) device parameters in order to support a given breakdown voltage. In this paper, We report the effect of 3D parameters such as the curvatures of the drain and source regions, doping density of LDMOS device with SOI ( Silicon-On-Insulator) substrates based on numerical simulations and analytical solutions using cylindrical coordinates with device simulator "MEDICI" and Synopsys 3D simulator Sentaurus 2009.06-SP2 version. We stress the necessary 3D simulation for power device with racetrack, interdigitated layouts etc.
引用
收藏
页码：125 / 129
页数：5
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