Enhanced Thermoelectric Properties of La-Doped ZrNiSn Half-Heusler Compound

被引：19
作者：
Akram, Rizwan [1 ]
Zhang, Qiang [1 ]
Yang, Dongwang [1 ]
Zheng, Yun [1 ]
Yan, Yonggao [1 ]
Su, Xianli [1 ]
Tang, Xinfeng [1 ]
机构：
[1] Wuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Peoples R China
来源：
JOURNAL OF ELECTRONIC MATERIALS | 2015年 / 44卷 / 10期
关键词：
Half-Heuslers; defects; composite materials; NI; CONDUCTIVITY; SCATTERING;
D O I：
10.1007/s11664-015-3882-6
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The effect of La doping on ZrNiSn half-Heusler (HH) compound has been studied to explore the composition variation and structural modifications for improvement of its thermoelectric performance. A series of La (x) Zr1-x NiSn (x = 0, 0.005, 0.01, 0.015, 0.02, 0.03) alloys were prepared by induction melting combined with plasma-activated sintering. Structural analysis using x-ray diffraction (XRD), scanning electron microscopy (SEM), and transmission electron microscopy (TEM) confirmed the resulting material to be a composite of HH, NiZr, and La3Sn4-type phases. The volume fraction for the phases other than HH ranged from 1.5% to 25% with increasing La content, as estimated by Rietveld analysis. The solubility of La in ZrNiSn is estimated to be 1.5%. Point defects may play a significant role in carrier and phonon transport. Interestingly, the thermoelectric transport properties exhibited a considerable increase in electrical conductivity sigma with La doping and a significant drop in thermal conductivity kappa, leading to a thermoelectric figure of merit (ZT) of 0.53 at 923 K, representing an improvement of about 37% compared with the undoped sample.
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收藏
页码：3563 / 3570
页数：8
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