Water assisted atomic layer deposition of yttrium oxide using tris(N,N'-diisopropyl-2dimethylamido-guanidinato) yttrium(III): process development, film characterization and functional properties

We report a new atomic layer deposition (ALD) process for yttrium oxide (Y2O3) thin films using tris(N, N' -diisopropyl-2-dimethylamido-guanidinato) yttrium(III) [ Y(DPDMG)(3)] which possesses an optimal reactivity towards water that enabled the growth of high quality thin films. Saturative behavior of the precursor and a constant growth rate of 1.1 angstrom per cycle confirm the characteristic self-limiting ALD growth in a temperature range from 175 degrees Cto 250 degrees C. The polycrystalline films in the cubic phase are uniform and smooth with a root mean squared (RMS) roughness of 0.55 nm, while the O/Y ratio of 2.0 reveal oxygen rich layers with low carbon contaminations of around 2 at%. Optical properties determined via UV/Vis measurements revealed the direct optical band gap of 5.56 eV. The valuable intrinsic properties such as a high dielectric constant make Y2O3 a promising candidate in microelectronic applications. Thus the electrical characteristics of the ALD grown layers embedded in a metal insulator semiconductor (MIS) capacitor structure were determined which resulted in a dielectric permittivity of 11, low leakage current density (approximate to 10(-7) A cm(-2) at 2 MV cm(-1)) and high electrical breakdown fields (4.0-7.5 MV cm(-1)). These promising results