Epitaxial growth La0.67Ca0.33MnO3 thin film by radio frequency sputtering method

被引：2
作者：
Li, Z. Q. [1 ]
Gao, Y. Q. [1 ]
Jiang, E. Y. [1 ]
机构：
[1] Tianjin Univ, Tianjin Key Lab Low Dimens Mat Phys & Preparing T, Inst Adv Mat Phys, Fac Sci, Tianjin 300072, Peoples R China
来源：
APPLIED SURFACE SCIENCE | 2008年 / 254卷 / 21期
基金：
中国国家自然科学基金;
关键词：
deposition by sputtering; epitaxy film; colossal magnetoresistance;
D O I：
10.1016/j.apsusc.2008.04.099
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Perfect epitaxial growth of La0.67Ca0.33MnO3 (LCMO) thin film has been achieved on (1 0 0) LaAlO3 (LAO) single crystal substrate by radio frequency sputtering method. X-ray diffraction (XRD) and electron diffraction analysis indicates that La0.67Ca0.33MnO3 film grows epitaxially on LaAlO3 along [1 0 0] direction of the substrate. The resistivity variation with temperature of the film shows a sharp metal to semiconductor transition peak around 253 K, which is close to that of the target. The magnetoresistance (MR) also reveals high quality epitaxy film characteristic at low temperatures and near the metal to semiconductor transition temperature. (C) 2008 Elsevier B. V. All rights reserved.
引用
收藏
页码：6959 / 6961
页数：3
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