Reliability of High-Temperature Operation for GaN-Based Operational Amplifiers

被引：1

作者：

Nomoto, Kazuki ^{[1
]}

Hasegawa, Kazuya ^{[1
]}

Satoh, Masataka ^{[1
]}

Nakamura, Tohru ^{[1
]}

机构：

[1] Hosei Univ, Res Ctr Micronano Technol, Koganei, Tokyo 184, Japan

来源：

RELIABILITY AND MATERIALS ISSUES OF SEMICONDUCTOR OPTICAL AND ELECTRICAL DEVICES AND MATERIALS | 2010年 / 1195卷

关键词：

HEMTS;

D O I：

10.1557/PROC-1195-B08-02

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We demonstrated electrical characteristics of operational amplifier (OPAMP) circuits fabricated by GaN/AlGaN/GaN HEMTs operating over 100 degrees C. GaN/AlGaN/GaN HEMTs, with the extremely low source resistance were fabricated by multiple ion implantation, precisely controlled ion-implanted (I/I) resistors and Schottky barrier diodes were integrated on the silicon substrate. The GaN cap layer on the AlGaN was grown to decrease the gate leakage current and current collapse for AlGaN/GaN HEMTs.

引用

页数：4

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