The effect of indium doping on structural, electrical conductivity, photoconductivity and density of states properties of ZnO films

被引：112

作者：

Benouis, C. E. ^{[2
]}

Benhaliliba, M. ^{[2
]}

Sanchez Juarez, A. ^{[3
]}

Aida, M. S. ^{[4
]}

Chami, F. ^{[5
]}

Yakuphanoglu, F. ^{[1
]}

机构：

[1] Firat Univ, Dept Phys, Fac Sci & Arts, TR-23119 Elazig, Turkey

[2] USTOMB Univ, Fac Sci, Dept Phys, Oran, Algeria

[3] UNAM, Ctr Invest Energia, Temixco 62580, Morelos, Mexico

[4] Mentouri Univ, Dept Phys, Thin Films & Plasma Lab, Constantine 25000, Algeria

[5] Sheffield Hallam Univ, MERI, Sheffield S1 1WB, S Yorkshire, England

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2010年 / 490卷 / 1-2期

关键词：

ZnO; Spray pyrolysis; Indium doping; Photoconductivity; OXIDE THIN-FILMS; ZINC-OXIDE; OPTICAL-PROPERTIES; SN DOPANTS; SPRAY; AL; DEPOSITION; CONSTANTS; THICKNESS;

D O I：

10.1016/j.jallcom.2009.10.098

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The effect of indium doping on structural, electrical conductivity, photoconductivity and density of states properties of IZO thin films has been investigated. X-rays diffraction spectra show that the IZO films are polycrystalline of wurtzite structure with preferential orientation of (002) direction. The IZO thin film for doping level of 2% exhibits the lowest resistivity of 6 x 10(-3) (Omega cm) compared to undoped ZnO of 17 (Omega cm). The optical gaps of the IZO thin films were determined using optical transmission spectra and the obtained optical band gap value increases slightly from 3.28 eV to 3.35 eV due to the indium doping. The IZO film indicates a strong photoconductivity with indium doping level. The density of states, traps concentration and relaxation time for the films were calculated using Laplace transform method and these parameters change with In doping level. It is evaluated that In doping has an important effect on the electronic and optical properties of ZnO thin films. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：62 / 67

页数：6

共 46 条

[1] [Anonymous], US DEP ENERGY J UNDE
[2] Caglar M, 2006, J OPTOELECTRON ADV M, V8, P1410
[3] Electrical and optical properties of undoped and In-doped ZnO thin films
Caglar, Mujdat
Caglar, Yasemin
Ilican, Saliha
[J]. PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4, NO 3, 2007, 4 (03): : 1337 - +
[4] Effects of In, Al and Sn dopants on the structural and optical properties of ZnO thin films
Caglar, Yasemin
Ilican, Saliha
Caglar, Mujdat
Yakuphanoglu, Fahrettin
[J]. SPECTROCHIMICA ACTA PART A-MOLECULAR AND BIOMOLECULAR SPECTROSCOPY, 2007, 67 (3-4) : 1113 - 1119
[5] Caglar Y, 2006, J OPTOELECTRON ADV M, V8, P1867
[6] Optical properties of indium-doped ZnO films
Cao, YG
Miao, L
Tanemura, S
Tanemura, M
Kuno, Y
Hayashi, Y
Mori, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2006, 45 (3A): : 1623 - 1628
[7] Cullity B. D., 1978, ELEMENTS XRAY DIFFRA
[8] Characterization of indium-doped zinc oxide films deposited by pyrolytic spray with different indium compounds as dopants
Gomez, H
Maldonado, A
Asomoza, R
Zironi, EP
CanetasOrtega, J
PalaciosGomez, J
[J]. THIN SOLID FILMS, 1997, 293 (1-2) : 117 - 123
[9] GOSH R, 2006, J ELECT MAT, V25, P1728
[10] EVAPORATED SN-DOPED IN2O3 FILMS - BASIC OPTICAL-PROPERTIES AND APPLICATIONS TO ENERGY-EFFICIENT WINDOWS
HAMBERG, I
GRANQVIST, CG
[J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (11) : R123 - R159

← 1 2 3 4 5 →