Electro-thermal Simulation of 1200 V 4H-SiC MOSFET Short-Circuit SOA

被引：0

作者：

Duong, T. H. ^{[1
]}

Ortiz, J. M. ^{[1
]}

Berning, D. W. ^{[1
]}

Hefner, A. R. ^{[1
]}

Ryu, S. -H. ^{[2
]}

Palmour, J. W. ^{[2
]}

机构：

[1] NIST, Gaithersburg, MD 20899 USA

[2] Cree Inc, Durham, NC 27703 USA

来源：

2015 IEEE 27TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & IC'S (ISPSD) | 2015年

关键词：

electro-thermal simulation; model validation; MOSFET; short-circuit; silicon carbide; SOA; MODEL;

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

The purpose of this paper is to introduce a dynamic electro-thermal simulation and analysis approach for device design and short-circuit safe-operating-area (SOA) characterization using a physics-based electro-thermal Saber (R)* model. Model parameter extraction, simulation, and validation results are given for several commercially available 4H-silicon carbide (SiC) power MOSFETs with a voltage rating of 1200 V and with current ratings of 31.6 A and 42 A. The electro-thermal model and simulations are used to analyze the short-circuit SOA including the measured failure time (t(failure)) and simulated device internal junction temperature (T-j) at failure for different gate voltages (V-GS) and drain voltages (V-DS).

引用

页码：217 / 220

页数：4

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